Kondo lattice behaviour in CePt2(Si1-xSn x)2 alloys

M. B.Tchoula Tchokonté, P. De V. Du Plessis, A. M. Strydom

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

Measurements of electrical resistivity are presented for polycrystalline alloys in the CePt2(Si1-xSnx)2 system. Results of X-ray diffraction indicate that the tetragonal region of the CePt2(Si1-xSnx)2 alloy system that is amenable for study only extends up to x=0.3. The resistivity maximum characteristic of a Kondo lattice is observed at a temperature T max=63 K for the parent compound CePt2Si2 and shifts to lower temperatures with increase in Sn content. The compressible Kondo lattice model is applied to describe the results of Tmax in terms of the on-site Kondo exchange interaction J and the electron density of states at the Fermi level N(EF). A value of ̄JN(EF)̄=0. 060±0.009 for the parent compound is obtained from the experimental results.

Original languageEnglish
Pages (from-to)450-455
Number of pages6
JournalSolid State Communications
Volume136
Issue number8
DOIs
Publication statusPublished - Nov 2005

Keywords

  • D. Heavy fermions
  • D. Kondo effect

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry

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