Interplay between hybridisation gaps and unusual magnetic orders in Kondo semiconductors CeT₂Al₁₀ (T = Ru and Os)

Kondo semiconductors based on rare-earth elements possess a narrow gap in the renormalised density of states near the Fermi level. Their ground states remain nonmagnetic due to strong hybridisation of the 4f state with conduction bands. However, in the orthorhombic compounds CeT₂Al₁₀ (T = Ru, Os), opening of a hybridisation gap is followed by an antiferromagnetic (AFM) order at a rather high temperature T_N≅ 28 K. Our systematic studies of the effects of electron/hole doping on the magnetic and transport properties, electron tunnelling, and spin-gap formation revealed that the hybridisation gap is indispensable for the unusual AFM order. Under uniaxial pressure, T_N increases linearly as the orthorhombic b-axis parameter is decreased. Our findings support the model that a kind of charge-density wave developing along the b axis in the presence of the hybridisation gap induces the AFM order in these systems.