Interfacial layer effect on the enhancement of gilbert damping in RF magnetron sputtered Y₃Fe₅O₁₂/Gd₃Ga₅O₁₂ thin films

We report the magnetization dynamics study in Y₃Fe₅O₁₂ (YIG) film grown by rf magnetron sputtering techniques. The growth-induced interfacial layer is believed to affect the top YIG layer, interrupting the magnetic properties associated with it drastically. The structural data confirmed the epitaxial and strained growth of YIG on a highly matched GGG (100) substrate. The frequency variation of the FMR signal yields various important parameters, such as the line width (ΔH), effective magnetization (4πM_eff), and damping constant (α) at 300 K. The significant increase in 4πM_eff to 2187.848 Oe reflects the presence of non-collinear or antiparallel arrangement of magnetic moment in YIG thin-film. Apart from this value of α was reported to be 1.5 × 10⁻³ which is substantially higher than the values reported in the literature for such higher-quality epitaxial thin films. We anticipate that a detailed analysis of these findings will provide excellent speculation in the field of magnonics, advanced spintronics and terahertz frequency-related applications.