Interface chemistry and epitaxial growth modes of Sr F2 on Si(001)

L. Pasquali, S. M. Suturin, A. K. Kaveev, V. P. Ulin, N. S. Sokolov, B. P. Doyle, S. Nannarone

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12 Citations (Scopus)

Abstract

Molecular beam epitaxy has been used to grow Sr F2 thin films on Si(001). The growth modes have been investigated by atomic force microscopy, electron diffraction, and photoemission. Two principal growth regimes have been identified: (i) when deposition is carried out with the substrate held at a temperature of 700-750°C, Sr F2 molecules react with the substrate giving rise to a Sr-rich wetting layer on top of which three dimensional bulklike fluoride ridges develop; (ii) when deposition is carried out with the substrate held at 400°C, a nanopatterned film forms with characteristic triangular islands. Results are compared to the growth mode of Ca F2 on Si(001) under analogous deposition conditions. Morphological and structural differences between the two systems are associated with the larger lattice parameter of Sr F2 with respect to Ca F2, resulting in a larger mismatch with the Si substrate.

Original languageEnglish
Article number075403
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume75
Issue number7
DOIs
Publication statusPublished - 2 Feb 2007
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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