Abstract
Molecular beam epitaxy has been used to grow Sr F2 thin films on Si(001). The growth modes have been investigated by atomic force microscopy, electron diffraction, and photoemission. Two principal growth regimes have been identified: (i) when deposition is carried out with the substrate held at a temperature of 700-750°C, Sr F2 molecules react with the substrate giving rise to a Sr-rich wetting layer on top of which three dimensional bulklike fluoride ridges develop; (ii) when deposition is carried out with the substrate held at 400°C, a nanopatterned film forms with characteristic triangular islands. Results are compared to the growth mode of Ca F2 on Si(001) under analogous deposition conditions. Morphological and structural differences between the two systems are associated with the larger lattice parameter of Sr F2 with respect to Ca F2, resulting in a larger mismatch with the Si substrate.
Original language | English |
---|---|
Article number | 075403 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 75 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2 Feb 2007 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics