Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate

Babiker M. Jaffar; H. C. Swart; H. A.A.Seed Ahmed; A. Yousif; R. E. Kroon; O. M. Ntwaeaborwa

doi:10.1016/j.optmat.2023.114291

Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate

Babiker M. Jaffar, H. C. Swart, H. A.A.Seed Ahmed, A. Yousif, R. E. Kroon, O. M. Ntwaeaborwa

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

Bi³⁺ doped LaGaO₃ powders and thin films were grown via citric acid sol-gel combustion method and pulsed laser deposition (PLD) technique, respectively. X-ray diffraction data confirmed crystallization of the orthorhombic LaGaO₃ phase. Inductive coupled plasma spectroscopy data indicated that some Bi³⁺ ions evaporated at temperatures exceeding 800 °C during thermal treatment. The highest photoluminescence (PL) and cathodoluminescence (CL) emissions with a peak stabilized at 370 nm were observed from La_1-x GaO₃:Bi³⁺_x=0.003 powders annealed at 1200 °C. The PL and CL emission spectra of La_1-x GaO₃:Bi³⁺_x=0.003 PLD thin films were similar to those of the powder samples. The effect of Bi³⁺ concentration and annealing temperature on the properties of powders and thin films is discussed.

Original language	English
Article number	114291
Journal	Optical Materials
Volume	143
DOIs	https://doi.org/10.1016/j.optmat.2023.114291
Publication status	Published - Sept 2023
Externally published	Yes

Keywords

Cathodoluminescence
Chemical stability
Phosphors
Photoluminescence
Pulsed laser deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Spectroscopy
Physical and Theoretical Chemistry
Organic Chemistry
Inorganic Chemistry
Electrical and Electronic Engineering

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Jaffar, B. M., Swart, H. C., Ahmed, H. A. A. S., Yousif, A., Kroon, R. E., & Ntwaeaborwa, O. M. (2023). Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate. Optical Materials, 143, Article 114291. https://doi.org/10.1016/j.optmat.2023.114291

@article{30b5db47092e47818a8b7a4523545f16,

title = "Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate",

abstract = "Bi3+ doped LaGaO3 powders and thin films were grown via citric acid sol-gel combustion method and pulsed laser deposition (PLD) technique, respectively. X-ray diffraction data confirmed crystallization of the orthorhombic LaGaO3 phase. Inductive coupled plasma spectroscopy data indicated that some Bi3+ ions evaporated at temperatures exceeding 800 °C during thermal treatment. The highest photoluminescence (PL) and cathodoluminescence (CL) emissions with a peak stabilized at 370 nm were observed from La1-x GaO3:Bi3+x=0.003 powders annealed at 1200 °C. The PL and CL emission spectra of La1-x GaO3:Bi3+x=0.003 PLD thin films were similar to those of the powder samples. The effect of Bi3+ concentration and annealing temperature on the properties of powders and thin films is discussed.",

keywords = "Cathodoluminescence, Chemical stability, Phosphors, Photoluminescence, Pulsed laser deposition",

author = "Jaffar, {Babiker M.} and Swart, {H. C.} and Ahmed, {H. A.A.Seed} and A. Yousif and Kroon, {R. E.} and Ntwaeaborwa, {O. M.}",

note = "Publisher Copyright: {\textcopyright} 2023",

year = "2023",

month = sep,

doi = "10.1016/j.optmat.2023.114291",

language = "English",

volume = "143",

journal = "Optical Materials",

issn = "0925-3467",

publisher = "Elsevier",

}

Jaffar, BM, Swart, HC, Ahmed, HAAS, Yousif, A, Kroon, RE & Ntwaeaborwa, OM 2023, 'Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate', Optical Materials, vol. 143, 114291. https://doi.org/10.1016/j.optmat.2023.114291

Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate. / Jaffar, Babiker M.; Swart, H. C.; Ahmed, H. A.A.Seed et al.
In: Optical Materials, Vol. 143, 114291, 09.2023.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate

AU - Jaffar, Babiker M.

AU - Swart, H. C.

AU - Ahmed, H. A.A.Seed

AU - Yousif, A.

AU - Kroon, R. E.

AU - Ntwaeaborwa, O. M.

PY - 2023/9

Y1 - 2023/9

N2 - Bi3+ doped LaGaO3 powders and thin films were grown via citric acid sol-gel combustion method and pulsed laser deposition (PLD) technique, respectively. X-ray diffraction data confirmed crystallization of the orthorhombic LaGaO3 phase. Inductive coupled plasma spectroscopy data indicated that some Bi3+ ions evaporated at temperatures exceeding 800 °C during thermal treatment. The highest photoluminescence (PL) and cathodoluminescence (CL) emissions with a peak stabilized at 370 nm were observed from La1-x GaO3:Bi3+x=0.003 powders annealed at 1200 °C. The PL and CL emission spectra of La1-x GaO3:Bi3+x=0.003 PLD thin films were similar to those of the powder samples. The effect of Bi3+ concentration and annealing temperature on the properties of powders and thin films is discussed.

AB - Bi3+ doped LaGaO3 powders and thin films were grown via citric acid sol-gel combustion method and pulsed laser deposition (PLD) technique, respectively. X-ray diffraction data confirmed crystallization of the orthorhombic LaGaO3 phase. Inductive coupled plasma spectroscopy data indicated that some Bi3+ ions evaporated at temperatures exceeding 800 °C during thermal treatment. The highest photoluminescence (PL) and cathodoluminescence (CL) emissions with a peak stabilized at 370 nm were observed from La1-x GaO3:Bi3+x=0.003 powders annealed at 1200 °C. The PL and CL emission spectra of La1-x GaO3:Bi3+x=0.003 PLD thin films were similar to those of the powder samples. The effect of Bi3+ concentration and annealing temperature on the properties of powders and thin films is discussed.

KW - Cathodoluminescence

KW - Chemical stability

KW - Phosphors

KW - Photoluminescence

KW - Pulsed laser deposition

UR - http://www.scopus.com/inward/record.url?scp=85168806992&partnerID=8YFLogxK

U2 - 10.1016/j.optmat.2023.114291

DO - 10.1016/j.optmat.2023.114291

M3 - Article

AN - SCOPUS:85168806992

SN - 0925-3467

VL - 143

JO - Optical Materials

JF - Optical Materials

M1 - 114291

ER -

Influence of doping concentration and annealing temperature on the structure, particle morphology, and luminescent properties of powders and pulsed laser deposited thin films of bismuth-doped lanthanum gallate

Abstract

Keywords

ASJC Scopus subject areas

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