Improved luminescence properties of pulsed laser deposited Y ₃(Al,Ga)₅O₁₂:Tb thin films by post deposition annealing

Engineering

• Luminescence Property 100%
• Deposited Film 100%
• Pulsed Laser 100%
• Thin Films 100%
• Root Mean Square Value 33%
• Ray Diffraction 33%
• Annealing Temperature 33%
• Oxide Layer 33%
• Root Mean Square 33%
• Square Roughness 33%
• Captured Image 33%
• Crystallinity 33%
• Atomic Force Microscopy 33%
• Accelerating Voltage 33%
• Surface Oxide 33%

Keyphrases

• Auger Electrons 100%
• Three-dimensional Atomic Force Microscopy 50%
• Electron Spectrometer 50%
• As-deposited 50%
• As-deposited Films 50%
• Gas Concentration 50%
• Roughness Value 50%
• Root Mean Square Roughness 50%
• Deposited Film 50%
• Surface Oxide Layer 50%

Material Science

• Film 100%
• Annealing 100%
• Luminescence 100%
• Thin Films 100%
• Cathodoluminescence 33%
• X-Ray Diffraction 16%
• Amorphous Material 16%
• Pulsed Laser Deposition 16%
• Electron Microprobe 16%
• Oxide Surface 16%