Improved luminescence properties of pulsed laser deposited Y 3(Al,Ga)5O12:Tb thin films by post deposition annealing

A. Yousif, H. C. Swart, O. M. Ntwaeaborwa

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Y3(Al,Ga)5O12:Tb thin films were successfully deposited on Si (1 0 0) substrates in an oxygen working atmosphere by the pulsed laser deposition (PLD) technique. The as-deposited films were amorphous but crystallized when annealed in air at 400 C and 800 C for 1 h as confirmed by X-ray diffraction. Three dimensional atomic force microscopy (AFM) images of the as-deposited film show well defined spherically grains that were uniformly distributed over the surface with a root mean square (RMS) roughness value of 9 nm. After annealing at 800 C the surface became smooth and the RMS value was reduced to 6 nm. The smooth layer was confirmed to be a surface oxide layer enriched with Ga from the images captured using a nano-scanning Auger electron microprobe (NanoSAM). The PL intensities were observed to increase as a function of annealing temperatures and this was attributed to improvement of the crystallinity of the films and a possible variation of Ga concentration in the thin films. In addition, cathodoluminescence (CL) properties of the films were recorded when the films were irradiated with a beam of electrons in the vacuum chamber of the Auger electron spectrometer. The CL intensity of the deposited film was recorded as a function of electron dose as well as the accelerating voltage.

Original languageEnglish
Pages (from-to)201-206
Number of pages6
JournalJournal of Luminescence
Publication statusPublished - 2013
Externally publishedYes


  • Annealing effect
  • Cathodoluminescence (CL)
  • PLD Y(Al,Ga)O:Tb
  • Photoluminescence (PL)
  • Thin films

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • General Chemistry
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


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