Abstract
Carrier energy and momentum engineering design concepts have been utilized to realize higher intensity, up to 200 nW. μm-2 in p+nn+ silicon avalanche-based LEDs in a silicon 0.35- μm RF bipolar process. The spectral range is from 600- to 850-nm wavelength region. Best performance are up to 600-nW vertical emission in a 3- μm square active area at 10 V and 1 mA (200 nW.um-2). The achieved emitted optical intensity is about 100 fold better as compared with other published work for nearest related devices. In particular, evidence has been obtained that light emission in silicon are strongly related to scattering mechanisms in a high density n+ dopant matrix of phosphorous atoms in silicon that has been exposed to successive thermal cycles, as well on the optimization of the carrier energy and momentum distributions during such interactions.
| Original language | English |
|---|---|
| Article number | 7102677 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 51 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 1 Jul 2015 |
| Externally published | Yes |
Keywords
- CMOS integrated circuit technology
- light emitting devices
- optical communication
- optical interconnects
- sensors
- Si LEDs
- Silicon photonics
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering