High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures

Arnaud P. Nono Tchiomo; Wolfgang Braun; Bryan P. Doyle; Wilfried Sigle; Peter Van Aken; Jochen Mannhart; Prosper Ngabonziza

doi:10.1063/1.5094867

High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO₃/SrZrO₃ heterostructures

Arnaud P. Nono Tchiomo, Wolfgang Braun, Bryan P. Doyle, Wilfried Sigle, Peter Van Aken, Jochen Mannhart, Prosper Ngabonziza

Physics

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

By inserting a SrZrO₃ buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO₃ films. A room temperature mobility of 140 cm² V^-1s^-1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 10⁹ cm^-2 for buffered films prepared on (110) TbScO₃ substrates by pulsed laser deposition.

Original language	English
Article number	041119
Journal	APL Materials
Volume	7
Issue number	4
DOIs	https://doi.org/10.1063/1.5094867
Publication status	Published - 1 Apr 2019

ASJC Scopus subject areas

General Materials Science
General Engineering

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title = "High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO3/SrZrO3 heterostructures",

abstract = "By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V-1s-1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm-2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.",

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AU - Nono Tchiomo, Arnaud P.

AU - Braun, Wolfgang

AU - Doyle, Bryan P.

AU - Sigle, Wilfried

AU - Van Aken, Peter

AU - Mannhart, Jochen

AU - Ngabonziza, Prosper

PY - 2019/4/1

Y1 - 2019/4/1

N2 - By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V-1s-1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm-2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.

AB - By inserting a SrZrO3 buffer layer between the film and the substrate, we demonstrate a significant reduction of the threading dislocation density with an associated improvement of the electron mobility in La:BaSnO3 films. A room temperature mobility of 140 cm2 V-1s-1 is achieved for 25-nm-thick films without any postgrowth treatment. The density of threading dislocations is only 4.9 × 109 cm-2 for buffered films prepared on (110) TbScO3 substrates by pulsed laser deposition.

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High-temperature-grown buffer layer boosts electron mobility in epitaxial La-doped BaSnO₃/SrZrO₃ heterostructures

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