High-resolution soft X-ray photoemission study of a Kondo semiconductor and related compounds

A. Sekiyama, Y. Fujita, M. Tsunekawa, S. Kasai, A. Shigemoto, S. Imada, D. T. Adroja, T. Yoshino, F. Iga, T. Takabatake, T. Nanba, S. Suga

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

We have performed the bulk-sensitive high-resolution soft X-ray photoemission study of a Kondo semiconductor CeRhAs and related compounds CeNiSn and CePdSn. The comparison of the spectra of polycrystalline CePdSn on the fractured and scraped surfaces show that the fracturing of the samples is much better than the scraping in order to obtain intrinsic photoemission spectra. The Ce 4d core-level spectra show clear differences in the electronic states among the materials.

Original languageEnglish
Pages (from-to)655-657
Number of pages3
JournalJournal of Electron Spectroscopy and Related Phenomena
Volume144-147
DOIs
Publication statusPublished - Jun 2005
Externally publishedYes

Keywords

  • CePdsSn
  • CeRhAs
  • Photoemission
  • Strongly correlated systems

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Radiation
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Spectroscopy
  • Physical and Theoretical Chemistry

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