High-intensity 100-nW 5GHz silicon avalanche LED utilizing carrier energy and momentum engineering

Lukas W. Snyman, Jean Luc Polleux, Kingsley A. Ogudo, Carlos Viana, Sebastain Wahl

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Citations (Scopus)


Graded junction, carrier energy and momentum engineering concepts have been utilized to realize a high intensity 100 nW 5GHz Silicon Avalanche based LED (Si Av LED). A silicon 0.35 micron RF bi-polar process was used as design and processing technology. Particularly, the carrier momentum and energy distributions were modeled in graded junction Silicon p+-i-n structures, and utilized to increase optical yield. Best performance are up to 750nW emission in a 7 micron square active area at 10 V and 1mA. The device show up to 5 GHz modulation bandwidth. The spectral range is from 450 nm to 850 nm with an emphasized components in the white spectral region. The process is greatly CMOS compatible. The technology is particularly suitable for application in futuristic on- chip micro-photonic systems, lab-on chip systems, silicon- based micro display systems, on chip optical links, and optical inter-connects systems.

Original languageEnglish
Title of host publicationSilicon Photonics IX
ISBN (Print)9780819499035
Publication statusPublished - 2014
Externally publishedYes
EventSilicon Photonics IX - San Francisco, CA, United States
Duration: 3 Feb 20145 Feb 2014

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSilicon Photonics IX
Country/TerritoryUnited States
CitySan Francisco, CA


  • CMOS integrated circuit technology
  • Light emitting devices
  • Optical communication
  • Optical interconnects
  • Sensors
  • Si LEDs
  • Silicon photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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