Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

Engineering

• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Complementary Metal-Oxide-Semiconductor 100%
• Radio Frequency 100%
• Gate Dielectric 66%
• Energy Engineering 33%
• Transceiver 33%
• Switching Speed 33%
• Current Speed 33%
• High Dielectric Constant 33%
• Acceptable Limit 33%
• Dielectric Film 33%

Material Science

• Complementary Metal-Oxide-Semiconductor Device 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Hafnium 100%
• Thermal Stability 33%
• Silicon 33%
• Capacitance 33%
• Permittivity 33%
• Dielectric Material 33%
• Capacitor 33%
• Dielectric Films 33%

Keyphrases

• Semiconductor Switches 100%
• Hafnia 33%
• Sizing Ratio 33%
• Gate Dielectric 33%
• Dielectric Films 33%
• High-k Gate Dielectrics 33%