Hafnium Dioxide-Based Double-Pole Four-Throw Double-Gate RF CMOS Switch

Viranjay M. Srivastava, Ghanshyam Singh

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review

1 Citation (Scopus)


Established radio-frequency complementary metal-oxide-semiconductor (RF CMOS) switch contains MOSFET in its main architecture with 5.0 V of control voltage and requires high value of resistance in circuitry of the transceivers to detect the signal. To avoid the high value of control voltage and resistances, we have designed a novel double-pole four-throw (DP4T) RF switch by using the MOSFET technology and analyzed its performance in terms of drain currents and switching speed in the previous chapters. The reduction in sizing ratio of the gate dielectric, which works as a capacitor in the MOSFET, results in the increase of capacitance and speed of the device. However, this process has reached up to the limit where further reduction of SiO2 thickness increases the leakage current above the acceptable limit. This problem can be resolved by replacing SiO2 with materials having high dielectric constants. Hafnium dioxide (also known as Hafnia) is one of them, which has relatively large energy bandgap and a better thermal stability as compared to silicon [1]. It is a leading contender for new high-k gate dielectric films.

Original languageEnglish
Title of host publicationAnalog Circuits and Signal Processing
Number of pages21
Publication statusPublished - 2014
Externally publishedYes

Publication series

NameAnalog Circuits and Signal Processing
ISSN (Print)1872-082X
ISSN (Electronic)2197-1854


  • Back Gate
  • Debye Length
  • Drain Current
  • HfO2 Film
  • Threshold Voltage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Information Systems
  • Signal Processing


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