Gap closure in semiconducting APtSn cubic compounds (A = U, Th or Zr)

R. Troć, A. M. Strydom, P. De V. Du Plessis, V. H. Tran, A. Czopnik, J. K. Cockroft

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10 Citations (Scopus)


UPtSn is known as a semimetal with a bandgap in the electronic density of states. We report the results of measurements of the cubic lattice parameter a(T), coefficient of thermal expansion α(T), magnetic susceptibility χX(T), magnetization σ(T,B), specific heat C(T) and electrical resistivity ρ(T,B). We give arguments that this compound is antiferromagnetically ordered with TN = 35 K, although this is not confirmed by neutron diffraction. For carefully annealed samples of UPtSn we provide a phenomenological description of electron transport properties in terms of the fact that the temperature-dependent bandgap is closed at T = 0 K. Results of electrical measurements on the isostructural compounds ThPtSn and ZrPtSn provide evidence for bandgap formation in these two compounds as well.

Original languageEnglish
Pages (from-to)1235-1253
Number of pages19
JournalPhilosophical Magazine
Issue number10
Publication statusPublished - 1 Apr 2003

ASJC Scopus subject areas

  • Condensed Matter Physics


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