GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

V. L. Berkovits; V. P. Ulin; O. E. Tereshchenko; D. Paget; A. C.H. Rowe; P. Chiaradia; B. P. Doyle; S. Nannarone

doi:10.1103/PhysRevB.80.233303

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

V. L. Berkovits
, V. P. Ulin
, O. E. Tereshchenko
, D. Paget
, A. C.H. Rowe
, P. Chiaradia
, B. P. Doyle
, S. Nannarone

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS^- and OH^- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

Original language	English
Article number	233303
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	80
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.80.233303
Publication status	Published - 18 Dec 2009
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.80.233303

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Berkovits, V. L., Ulin, V. P., Tereshchenko, O. E., Paget, D., Rowe, A. C. H., Chiaradia, P., Doyle, B. P., & Nannarone, S. (2009). GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes. Physical Review B - Condensed Matter and Materials Physics, 80(23), Article 233303. https://doi.org/10.1103/PhysRevB.80.233303

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abstract = "Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.",

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doi = "10.1103/PhysRevB.80.233303",

language = "English",

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T1 - GaAs(111) A and B surfaces in hydrazine sulfide solutions

T2 - Extreme polarity dependence of surface adsorption processes

AU - Berkovits, V. L.

AU - Ulin, V. P.

AU - Tereshchenko, O. E.

AU - Paget, D.

AU - Rowe, A. C.H.

AU - Chiaradia, P.

AU - Doyle, B. P.

AU - Nannarone, S.

PY - 2009/12/18

Y1 - 2009/12/18

N2 - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

AB - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.

UR - https://www.scopus.com/pages/publications/77954740921

U2 - 10.1103/PhysRevB.80.233303

DO - 10.1103/PhysRevB.80.233303

M3 - Article

AN - SCOPUS:77954740921

SN - 1098-0121

VL - 80

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 23

M1 - 233303

ER -

GaAs(111) A and B surfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes

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