TY - JOUR
T1 - GaAs(111) A and B surfaces in hydrazine sulfide solutions
T2 - Extreme polarity dependence of surface adsorption processes
AU - Berkovits, V. L.
AU - Ulin, V. P.
AU - Tereshchenko, O. E.
AU - Paget, D.
AU - Rowe, A. C.H.
AU - Chiaradia, P.
AU - Doyle, B. P.
AU - Nannarone, S.
PY - 2009/12/18
Y1 - 2009/12/18
N2 - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.
AB - Chemical bonds formed by hydrazine-sulfide treatment of GaAs(111) were studied by synchrotron photoemission spectroscopy. At the B surface, the top arsenic atoms are replaced by nitrogen atoms, while GaAs(111)A is covered by sulfur, also bonded to underlying gallium, despite the sulfide molar concentration being 103 times smaller than that of the hydrazine. This extreme dependence on surface polarity is explained by competitive adsorption processes of HS- and OH- anions and of hydrazine molecules, on Ga-adsorption sites, which have distinct configurations on the A and B surfaces.
UR - http://www.scopus.com/inward/record.url?scp=77954740921&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.80.233303
DO - 10.1103/PhysRevB.80.233303
M3 - Article
AN - SCOPUS:77954740921
SN - 1098-0121
VL - 80
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 23
M1 - 233303
ER -