Abstract
A single crystal of Ce3 Rh4 Sn13 has been investigated by means of electrical resistivity at low temperatures and in high magnetic fields. Measurements have been performed with field parallel to the [1 0 0] and [1 1 0] direction. Several transitions, first and second order ones, are observed, which originate from the entrance into a different antiferromagnetic states. Our data complement the phase diagram derived in previous work. We speculate that the origin of the antiferromagnetic transitions is related to the slight off-stoichiometry of the sample.
Original language | English |
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Pages (from-to) | 1312-1314 |
Number of pages | 3 |
Journal | Physica B: Condensed Matter |
Volume | 403 |
Issue number | 5-9 |
DOIs | |
Publication status | Published - 1 Apr 2008 |
Keywords
- Antiferromagnetism
- Cage compound
- Ce Rh Sn
- Phase diagram
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering