FEM analysis on damage layer in wire saw cutting single crystal silicon

Jianhua Zhang; Xiaojun Zhang; Tien Chien Jen; Jiafu Liu; Yi Hsin Yen

doi:10.1115/IMECE2010-37328

FEM analysis on damage layer in wire saw cutting single crystal silicon

Jianhua Zhang, Xiaojun Zhang, Tien Chien Jen, Jiafu Liu, Yi Hsin Yen

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

With the rapid development of large scale integrated circuit(IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The interaction of grains and the whole wire cutting process are analyzed by means of the coupling shear stress field, which got by the simulation results. The influence of the process parameters on the damage layer of the crystal silicon is analyzed by FEM.

Original language	English
Title of host publication	Design and Manufacturing
Publisher	American Society of Mechanical Engineers (ASME)
Pages	899-903
Number of pages	5
Edition	PARTS A AND B
ISBN (Print)	9780791844274
DOIs	https://doi.org/10.1115/IMECE2010-37328
Publication status	Published - 2010
Externally published	Yes
Event	ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010 - Vancouver, BC, Canada Duration: 12 Nov 2010 → 18 Nov 2010

Publication series

Name	ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
Number	PARTS A AND B
Volume	3

Conference

Conference	ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010
Country/Territory	Canada
City	Vancouver, BC
Period	12/11/10 → 18/11/10

ASJC Scopus subject areas

Mechanical Engineering

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10.1115/IMECE2010-37328

Cite this

Zhang, J., Zhang, X., Jen, T. C., Liu, J., & Yen, Y. H. (2010). FEM analysis on damage layer in wire saw cutting single crystal silicon. In Design and Manufacturing (PARTS A AND B ed., pp. 899-903). (ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE); Vol. 3, No. PARTS A AND B). American Society of Mechanical Engineers (ASME). https://doi.org/10.1115/IMECE2010-37328

@inproceedings{c2e1f1f86c6f4ca59eba7dec99080d7e,

title = "FEM analysis on damage layer in wire saw cutting single crystal silicon",

abstract = "With the rapid development of large scale integrated circuit(IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The interaction of grains and the whole wire cutting process are analyzed by means of the coupling shear stress field, which got by the simulation results. The influence of the process parameters on the damage layer of the crystal silicon is analyzed by FEM.",

author = "Jianhua Zhang and Xiaojun Zhang and Jen, {Tien Chien} and Jiafu Liu and Yen, {Yi Hsin}",

year = "2010",

doi = "10.1115/IMECE2010-37328",

language = "English",

isbn = "9780791844274",

series = "ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)",

publisher = "American Society of Mechanical Engineers (ASME)",

number = "PARTS A AND B",

pages = "899--903",

booktitle = "Design and Manufacturing",

edition = "PARTS A AND B",

note = "ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010 ; Conference date: 12-11-2010 Through 18-11-2010",

}

Zhang, J, Zhang, X, Jen, TC, Liu, J & Yen, YH 2010, FEM analysis on damage layer in wire saw cutting single crystal silicon. in Design and Manufacturing. PARTS A AND B edn, ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE), no. PARTS A AND B, vol. 3, American Society of Mechanical Engineers (ASME), pp. 899-903, ASME 2010 International Mechanical Engineering Congress and Exposition, IMECE 2010, Vancouver, BC, Canada, 12/11/10. https://doi.org/10.1115/IMECE2010-37328

FEM analysis on damage layer in wire saw cutting single crystal silicon. / Zhang, Jianhua; Zhang, Xiaojun; Jen, Tien Chien et al.
Design and Manufacturing. PARTS A AND B. ed. American Society of Mechanical Engineers (ASME), 2010. p. 899-903 (ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE); Vol. 3, No. PARTS A AND B).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Zhang, Xiaojun

AU - Jen, Tien Chien

AU - Liu, Jiafu

AU - Yen, Yi Hsin

PY - 2010

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N2 - With the rapid development of large scale integrated circuit(IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The interaction of grains and the whole wire cutting process are analyzed by means of the coupling shear stress field, which got by the simulation results. The influence of the process parameters on the damage layer of the crystal silicon is analyzed by FEM.

AB - With the rapid development of large scale integrated circuit(IC), there are strong demands for silicon wafers developing towards large diameter and thin wafer direction. The fixed-abrasive diamond wire saw (FAWS) technology is often used to cut the large diameter silicon. Currently, the detection of damage layers mainly depends on experiments, which are not only costly and time-consuming, but also would cause the new damage during the detection process, in the FAWS technology. In this paper, the damage layer of the material is studied by using the multi-grain finite element method. The interaction of grains and the whole wire cutting process are analyzed by means of the coupling shear stress field, which got by the simulation results. The influence of the process parameters on the damage layer of the crystal silicon is analyzed by FEM.

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T3 - ASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)

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PB - American Society of Mechanical Engineers (ASME)

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FEM analysis on damage layer in wire saw cutting single crystal silicon

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