Fabrication of rewritable and worm resistive memories with carbon nanoparticle/cyanoacrylate nanocomposites

The present work presents a study on new organic resistive memory devices, with carbon nanoparticle/cyanoacrylate thin film nanocomposites active layer, which was carried out on the search for the improvement of electrical characteristics and the reduction of the processing cost, in comparison to other similar devices yet reported alongside the literature. Controlled addition of the nanostructured phase to the insulating cyanoacrylate reinforcement matrix provides electrical bistability, enabling the fabrication of two categories of devices, the rewritable and the WORM (Write Once Read Many times memory) ones, by the control of nanocomposite aging time. The resulting memory devices showed a high ION/IOFF ratio between 10⁴ and 10⁵, and a very low recording voltage of 2.0 V if compared with the values reported alongside the literature, pointing the advantages of the present study.