Fabrication of a multijunction nitride-based Ti1.33N@BiVO4/GdIn2Se3 MXene heterostructure with enhanced optoelectronic and photoelectrochemical properties

Majahekupheleni Malati; Bonginkosi Thango; Thulane Paepae; Nkosinathi Gule; Langelihle Dlamini

doi:10.1016/j.apsadv.2025.100921

Fabrication of a multijunction nitride-based Ti_1.33N@BiVO₄/GdIn₂Se₃ MXene heterostructure with enhanced optoelectronic and photoelectrochemical properties

Stellenbosch University

Research output: Contribution to journal › Article › peer-review

Abstract

A dual interfacial heterojunction of 2D-2D Ti_1.33N@BiVO₄/GdIn₂Se₃ photocatalyst with enhanced photocatalytic properties was prepared. Microscopic images showed a 2D GdIn₂Se₃ sheet sandwiching a decahedron and a tetragonal bipyramidal (010) exposed facet of BiVO₄, covered by 2D Ti_1.33 N MXene nanosheets. The XRD data and HR-TEM analysis confirmed the successful fabrication of a multijunctional heterostructure. The optical studies showed a visible-light (460 to 550 nm) active Ti_1.33N@BiVO₄/GdIn₂Se₃ photocatalyst with suppressed charge carrier recombination. The Ti_1.33N@BiVO₄/GdIn₂Se₃ composite realised a Schottky junction and S-scheme dual charge transfer mechanism. A Schottky junction was realised at the BiVO₄@Ti_1.33Ninterface, and at the GdIn₂Se₃/BiVO₄ interface, an S-scheme pathway is observed. In agreement with the multijunction formation, the photoelectrochemical studies (EIS, OCVD, and PCR) showed an improvement in the charge carrier properties of the ternary composite. A low charge transfer resistance of 323Ω and a high charge carrier density of 1.08×10²¹ cm⁻³ were achieved in the Ti_1.33N@BiVO₄/GdIn₂Se₃ composite.

Original language	English
Article number	100921
Journal	Applied Surface Science Advances
Volume	31
DOIs	https://doi.org/10.1016/j.apsadv.2025.100921
Publication status	Published - Jan 2026

Keywords

In-plane MXene
Multijunction interface
Out-of-plane MXene
Photocatalyst
S-scheme

ASJC Scopus subject areas

Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsadv.2025.100921

Cite this

@article{e934cf504af64e918c376e4836d1cefc,

title = "Fabrication of a multijunction nitride-based Ti1.33N@BiVO4/GdIn2Se3 MXene heterostructure with enhanced optoelectronic and photoelectrochemical properties",

abstract = "A dual interfacial heterojunction of 2D-2D Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with enhanced photocatalytic properties was prepared. Microscopic images showed a 2D GdIn2Se3 sheet sandwiching a decahedron and a tetragonal bipyramidal (010) exposed facet of BiVO4, covered by 2D Ti1.33 N MXene nanosheets. The XRD data and HR-TEM analysis confirmed the successful fabrication of a multijunctional heterostructure. The optical studies showed a visible-light (460 to 550 nm) active Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with suppressed charge carrier recombination. The Ti1.33N@BiVO4/GdIn2Se3 composite realised a Schottky junction and S-scheme dual charge transfer mechanism. A Schottky junction was realised at the [email protected], and at the GdIn2Se3/BiVO4 interface, an S-scheme pathway is observed. In agreement with the multijunction formation, the photoelectrochemical studies (EIS, OCVD, and PCR) showed an improvement in the charge carrier properties of the ternary composite. A low charge transfer resistance of 323Ω and a high charge carrier density of 1.08×1021 cm−3 were achieved in the Ti1.33N@BiVO4/GdIn2Se3 composite.",

keywords = "In-plane MXene, Multijunction interface, Out-of-plane MXene, Photocatalyst, S-scheme",

author = "Majahekupheleni Malati and Bonginkosi Thango and Thulane Paepae and Nkosinathi Gule and Langelihle Dlamini",

note = "Publisher Copyright: {\textcopyright} 2025 The Author(s).",

year = "2026",

month = jan,

doi = "10.1016/j.apsadv.2025.100921",

language = "English",

volume = "31",

journal = "Applied Surface Science Advances",

issn = "2666-5239",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Fabrication of a multijunction nitride-based Ti1.33N@BiVO4/GdIn2Se3 MXene heterostructure with enhanced optoelectronic and photoelectrochemical properties

AU - Malati, Majahekupheleni

AU - Thango, Bonginkosi

AU - Paepae, Thulane

AU - Gule, Nkosinathi

AU - Dlamini, Langelihle

PY - 2026/1

Y1 - 2026/1

N2 - A dual interfacial heterojunction of 2D-2D Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with enhanced photocatalytic properties was prepared. Microscopic images showed a 2D GdIn2Se3 sheet sandwiching a decahedron and a tetragonal bipyramidal (010) exposed facet of BiVO4, covered by 2D Ti1.33 N MXene nanosheets. The XRD data and HR-TEM analysis confirmed the successful fabrication of a multijunctional heterostructure. The optical studies showed a visible-light (460 to 550 nm) active Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with suppressed charge carrier recombination. The Ti1.33N@BiVO4/GdIn2Se3 composite realised a Schottky junction and S-scheme dual charge transfer mechanism. A Schottky junction was realised at the [email protected], and at the GdIn2Se3/BiVO4 interface, an S-scheme pathway is observed. In agreement with the multijunction formation, the photoelectrochemical studies (EIS, OCVD, and PCR) showed an improvement in the charge carrier properties of the ternary composite. A low charge transfer resistance of 323Ω and a high charge carrier density of 1.08×1021 cm−3 were achieved in the Ti1.33N@BiVO4/GdIn2Se3 composite.

AB - A dual interfacial heterojunction of 2D-2D Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with enhanced photocatalytic properties was prepared. Microscopic images showed a 2D GdIn2Se3 sheet sandwiching a decahedron and a tetragonal bipyramidal (010) exposed facet of BiVO4, covered by 2D Ti1.33 N MXene nanosheets. The XRD data and HR-TEM analysis confirmed the successful fabrication of a multijunctional heterostructure. The optical studies showed a visible-light (460 to 550 nm) active Ti1.33N@BiVO4/GdIn2Se3 photocatalyst with suppressed charge carrier recombination. The Ti1.33N@BiVO4/GdIn2Se3 composite realised a Schottky junction and S-scheme dual charge transfer mechanism. A Schottky junction was realised at the [email protected], and at the GdIn2Se3/BiVO4 interface, an S-scheme pathway is observed. In agreement with the multijunction formation, the photoelectrochemical studies (EIS, OCVD, and PCR) showed an improvement in the charge carrier properties of the ternary composite. A low charge transfer resistance of 323Ω and a high charge carrier density of 1.08×1021 cm−3 were achieved in the Ti1.33N@BiVO4/GdIn2Se3 composite.

KW - In-plane MXene

KW - Multijunction interface

KW - Out-of-plane MXene

KW - Photocatalyst

KW - S-scheme

UR - https://www.scopus.com/pages/publications/105025654748

U2 - 10.1016/j.apsadv.2025.100921

DO - 10.1016/j.apsadv.2025.100921

M3 - Article

AN - SCOPUS:105025654748

SN - 2666-5239

VL - 31

JO - Applied Surface Science Advances

JF - Applied Surface Science Advances

M1 - 100921

ER -