Fabrication and synthesis of SnO_X thin films: a review

Due to its exceptional electrical, optical, chemical and magnetic properties, tin oxide (SnO and SnO₂), which is a functional material, has gained enormous attention for use in a variety of applications. Films of SnO_X have a direct band gap between the ranges of 2.2 and 3.6 eV, with these films finding usefulness in various functions such as solar cells, transparent conducting oxides for gas sensors, lithium-ion batteries and microelectronics, and use in the optoelectronics industries. In order to satisfy the needs of a broad range of these applications, thin films with an extensive properties span defined by film composition, thickness, structural properties and morphology are required. This article explains the theory and research status of the various manufacturing processes of tin oxide. The purpose is to analyze the effects of the thin films through distinct forms of deposition. The general finding summarized in this research on SnO_X showed that various researchers studied specific characteristics of tin oxide properties restricted by experimental conditions.