Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes

Vinod Kumar, Neetu Singh, Avinashi Kapoor, Odireleng M. Ntwaeaborwa, Hendrik C. Swart

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)

Abstract

In this paper, the growth of n-type aluminum boron co-doped ZnO (n-AZB) on a p-type silicon (p-Si) substrate by sol-gel method using spin coating technique is reported. The n-AZB/p-Si heterojunctions were annealed at different temperatures ranging from 400 to 800 C. The crystallite size of the AZB nanostructures was found to vary from 28 to 38 nm with the variation in annealing temperature. The band gap of the AZB decreased from 3.29 to 3.27 eV, with increasing annealing temperature from 400 to 700 C and increased to 3.30 eV at 800 C probably due to the formation of Zn2SiO4 at the interface. The band gap variation is explained in terms of annealing induced stress in the AZB. The n-AZB/p-Si heterojunction exhibited diode behavior. The best rectifying behavior was exhibited at 700 C.

Original languageEnglish
Pages (from-to)4596-4600
Number of pages5
JournalMaterials Research Bulletin
Volume48
Issue number11
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • A. Oxides
  • A. Thin films
  • B. Sol-gel chemistry
  • D. Electrical properties
  • D. Optical properties

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Fabrication and characterization of n-type aluminum-boron co-doped ZnO on p-type silicon (n-AZB/p-Si) heterojunction diodes'. Together they form a unique fingerprint.

Cite this