Explicit model of cylindrical surrounding double-gate MOSFET

We present an analytical and continuous dc model for undoped cylindrical surrounding double-gate (CSDG) MOSFETs for which the drain current and subthreshold model is written as an explicit function of the applied voltages for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. The model is based on a unified charge control model developed for this device. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with drain induced barrier lowering (DIBL) and short channel effects (SCE), for the integrated circuit of the radio frequency sub-system. We analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET. The proposed explicit model satisfies the conformity with the numerical exact solution obtained from the charge control model.