Etching or stabilization of GaAs(001) under Alkali and halogen adsorption
- O. E. Tereshchenko
- , D. Paget
- , K. V. Toropetsky
- , V. L. Alperovich
- , S. V. Eremeev
- , A. V. Bakulin
- , S. E. Kulkova
- , B. P. Doyle
- , S. Nannarone
- RAS - Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University
- CNRS
- RAS - Institute of Strength Physics and Materials Science, Siberian Branch
- Tomsk State University
- National Institute for Nuclear Physics
- University of Modena and Reggio Emilia
Research output: Contribution to journal › Article › peer-review
12
Citations
(Scopus)