Electronic properties of semiconducting CeRu4Sn6

A. M. Strydom; Z. Guo; S. Paschen; R. Viennois; F. Steglich

doi:10.1016/j.physb.2005.01.111

Electronic properties of semiconducting CeRu₄Sn₆

A. M. Strydom, Z. Guo, S. Paschen, R. Viennois, F. Steglich

Physics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	359-361
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2005.01.111
Publication status	Published - 30 Apr 2005

Keywords

CeRuSn
Cerium compounds
Kondo insulators

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.01.111

Cite this

@article{604af7bc777f4ff69a5e865873563fc9,

title = "Electronic properties of semiconducting CeRu4Sn6",

abstract = "Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.",

keywords = "CeRuSn, Cerium compounds, Kondo insulators",

author = "Strydom, \{A. M.\} and Z. Guo and S. Paschen and R. Viennois and F. Steglich",

year = "2005",

month = apr,

day = "30",

doi = "10.1016/j.physb.2005.01.111",

language = "English",

volume = "359-361",

pages = "293--295",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Electronic properties of semiconducting CeRu4Sn6

AU - Strydom, A. M.

AU - Guo, Z.

AU - Paschen, S.

AU - Viennois, R.

AU - Steglich, F.

PY - 2005/4/30

Y1 - 2005/4/30

N2 - Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

AB - Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

KW - CeRuSn

KW - Cerium compounds

KW - Kondo insulators

UR - https://www.scopus.com/pages/publications/18244394535

U2 - 10.1016/j.physb.2005.01.111

DO - 10.1016/j.physb.2005.01.111

M3 - Article

AN - SCOPUS:18244394535

SN - 0921-4526

VL - 359-361

SP - 293

EP - 295

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - SPEC. ISS.

ER -