Electronic properties of semiconducting CeRu4Sn6

A. M. Strydom; Z. Guo; S. Paschen; R. Viennois; F. Steglich

doi:10.1016/j.physb.2005.01.111

Electronic properties of semiconducting CeRu₄Sn₆

A. M. Strydom, Z. Guo, S. Paschen, R. Viennois, F. Steglich

Physics

Research output: Contribution to journal › Article › peer-review

24 Citations (Scopus)

Abstract

Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

Original language	English
Pages (from-to)	293-295
Number of pages	3
Journal	Physica B: Condensed Matter
Volume	359-361
Issue number	SPEC. ISS.
DOIs	https://doi.org/10.1016/j.physb.2005.01.111
Publication status	Published - 30 Apr 2005

Keywords

CeRuSn
Cerium compounds
Kondo insulators

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Access to Document

10.1016/j.physb.2005.01.111

Cite this

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title = "Electronic properties of semiconducting CeRu4Sn6",

abstract = "Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.",

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T1 - Electronic properties of semiconducting CeRu4Sn6

AU - Strydom, A. M.

AU - Guo, Z.

AU - Paschen, S.

AU - Viennois, R.

AU - Steglich, F.

PY - 2005/4/30

Y1 - 2005/4/30

N2 - Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

AB - Measurements of specific heat, electrical resistivity, thermo-electric power, thermal conductivity, and the Hall coefficient on the semiconducting compound CeRu4Sn6 are presented. In C/T, the electronic specific heat, a -lnT divergent temperature dependence develops below 2 K, reaching 396mJ/moleK2 at 0.36 K. The zero-field resistivity increases down to 0.36 K after a weak minimum at 3 K. The interpretation of these characteristics in terms of a low carrier density are further borne out by data of the thermal transport.

KW - CeRuSn

KW - Cerium compounds

KW - Kondo insulators

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U2 - 10.1016/j.physb.2005.01.111

DO - 10.1016/j.physb.2005.01.111

M3 - Article

AN - SCOPUS:18244394535

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VL - 359-361

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EP - 295

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - SPEC. ISS.

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