Electronic and magnetic properties of nitrogen functionalized graphene-oxide

Graphene oxide potentially used as an intermediary in the production of single layer or few-layer graphene sheets. To achieve this, an oxidization and reduction process is used to developed single/few-layers and separate them without changing their structure. Graphene oxide has potential applications in many areas, e.g., electronics, magnetic, catalysis, and energy storage, because of its high charge-carrier mobility and high specific surface area. This study investigates the electronic and magnetic properties of graphene oxide (GO), and nitrogen functionalised graphene oxide (GO-Nx). GO is prepared using chemical process and hence functionalized with nitrogen precursors. GO and GO-Nx are characterised using X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy and Raman spectroscopy. Nitrogen functionalized GO become more graphitic in structure as observed from Raman spectroscopy and N 1s XPS spectrum that turn into higher magnetization observed from M-H hysteresis loops. The electronic density of states of GO-Nx is significantly higher than as compared to the GO as a result the magnetic properties also enhanced on GO-Nx. Our experimental results thus provide new evidences to control the magnetic and electronic properties of GO and GO-Nx for different electronic and magnetic device applications.