Electrical transport properties of Cr-Si and Cr-Ga alloy single crystals

A. R.E. Prinsloo; H. L. Alberts; P. Smit

doi:10.1088/0953-8984/10/12/011

Electrical transport properties of Cr-Si and Cr-Ga alloy single crystals

A. R.E. Prinsloo, H. L. Alberts, P. Smit

Physics

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Mesurements are reported of the electrical resistivity of dilute Cr-Si and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K. Analyses of the data show large magentic contributions to the electrical resistivity of all of the alloys at temperatures 0 < T < 2T_N. where T_N is the Néel temperature. These magnetic contributions are partly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribed to the effects of mixed incommensurate (I) and commensurate (C) spin-density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition temperature.

Original language	English
Pages (from-to)	2715-2725
Number of pages	11
Journal	Journal of Physics Condensed Matter
Volume	10
Issue number	12
DOIs	https://doi.org/10.1088/0953-8984/10/12/011
Publication status	Published - 30 Mar 1998

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics

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title = "Electrical transport properties of Cr-Si and Cr-Ga alloy single crystals",

abstract = "Mesurements are reported of the electrical resistivity of dilute Cr-Si and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K. Analyses of the data show large magentic contributions to the electrical resistivity of all of the alloys at temperatures 0 < T < 2TN. where TN is the N{\'e}el temperature. These magnetic contributions are partly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribed to the effects of mixed incommensurate (I) and commensurate (C) spin-density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition temperature.",

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T1 - Electrical transport properties of Cr-Si and Cr-Ga alloy single crystals

AU - Prinsloo, A. R.E.

AU - Alberts, H. L.

AU - Smit, P.

PY - 1998/3/30

Y1 - 1998/3/30

N2 - Mesurements are reported of the electrical resistivity of dilute Cr-Si and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K. Analyses of the data show large magentic contributions to the electrical resistivity of all of the alloys at temperatures 0 < T < 2TN. where TN is the Néel temperature. These magnetic contributions are partly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribed to the effects of mixed incommensurate (I) and commensurate (C) spin-density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition temperature.

AB - Mesurements are reported of the electrical resistivity of dilute Cr-Si and Cr-Ga alloy single crystals in the temperature range 4 to 1000 K. Analyses of the data show large magentic contributions to the electrical resistivity of all of the alloys at temperatures 0 < T < 2TN. where TN is the Néel temperature. These magnetic contributions are partly attributed to spin-fluctuation and temperature-dependent resonant impurity scattering effects. A hysteretic resistivity anomaly, ascribed to the effects of mixed incommensurate (I) and commensurate (C) spin-density-wave (SDW) states, was observed near the I-C phase transition temperature of Cr + 1.2 at.% Si. The resistivity of Cr + 0.16 at.% Ga shows a small and unusual anomaly near the spin-flip transition temperature.

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DO - 10.1088/0953-8984/10/12/011

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JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 12

ER -

Electrical transport properties of Cr-Si and Cr-Ga alloy single crystals

Abstract

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