Electrical resistivity of the Kondo systems (Ce1-xLax)TSi3 (T = Rh, Ir)

M. B. Tchoula Tchokonté; P. de V.du Plessis; A. M. Strydom

doi:10.1016/S0038-1098(00)00421-X

Electrical resistivity of the Kondo systems (Ce_1-xLa_x)TSi₃ (T = Rh, Ir)

M. B. Tchoula Tchokonté, P. de V.du Plessis, A. M. Strydom

University of the Witwatersrand

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The electrical resistivities of the pseudo-ternary alloys (Ce_1-xLa_x)TSi₃ (T = Rh, Ir;0≤x≤1) are reported. The 4f-derived part of their resistivities, ρ_4f, is found by subtracting the temperature-dependent part of the resistivity of LaTSi₃. A maximum, characteristic of dense Kondo systems, is obtained in ρ_4f at a temperature T_max = 105 K for CeRhSi₃ and at 130 K for CeIrSi₃. T_max decreases for both compounds with increased La concentration, x. X-ray powder diffraction was used to measure the increase in tetragonal unit cell volume V for the (Ce_1-xLa_x)TSi₃ alloys with increase in x. The compressible Kondo model is applied to describe our results of T_max(x) in terms of the on-site Kondo exchange interaction J and the electronic density of states N(E_F) at the Fermi level. The experimental results yield |JN(E_F)|_{x = 0} = 0.072±0.016 for CeRhSi₃ and 0.070±0.001 for CeIrSi₃.

Original language	English
Pages (from-to)	321-325
Number of pages	5
Journal	Solid State Communications
Volume	117
Issue number	5
DOIs	https://doi.org/10.1016/S0038-1098(00)00421-X
Publication status	Published - 9 Jan 2001
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(00)00421-X

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@article{90a9e8e431b2486bb758d2882974559a,

title = "Electrical resistivity of the Kondo systems (Ce1-xLax)TSi3 (T = Rh, Ir)",

abstract = "The electrical resistivities of the pseudo-ternary alloys (Ce1-xLax)TSi3 (T = Rh, Ir;0≤x≤1) are reported. The 4f-derived part of their resistivities, ρ4f, is found by subtracting the temperature-dependent part of the resistivity of LaTSi3. A maximum, characteristic of dense Kondo systems, is obtained in ρ4f at a temperature Tmax = 105 K for CeRhSi3 and at 130 K for CeIrSi3. Tmax decreases for both compounds with increased La concentration, x. X-ray powder diffraction was used to measure the increase in tetragonal unit cell volume V for the (Ce1-xLax)TSi3 alloys with increase in x. The compressible Kondo model is applied to describe our results of Tmax(x) in terms of the on-site Kondo exchange interaction J and the electronic density of states N(EF) at the Fermi level. The experimental results yield |JN(EF)|x = 0 = 0.072±0.016 for CeRhSi3 and 0.070±0.001 for CeIrSi3.",

author = "{Tchoula Tchokont{\'e}}, {M. B.} and Plessis, {P. de V.du} and Strydom, {A. M.}",

year = "2001",

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doi = "10.1016/S0038-1098(00)00421-X",

language = "English",

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pages = "321--325",

journal = "Solid State Communications",

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T1 - Electrical resistivity of the Kondo systems (Ce1-xLax)TSi3 (T = Rh, Ir)

AU - Tchoula Tchokonté, M. B.

AU - Plessis, P. de V.du

AU - Strydom, A. M.

PY - 2001/1/9

Y1 - 2001/1/9

N2 - The electrical resistivities of the pseudo-ternary alloys (Ce1-xLax)TSi3 (T = Rh, Ir;0≤x≤1) are reported. The 4f-derived part of their resistivities, ρ4f, is found by subtracting the temperature-dependent part of the resistivity of LaTSi3. A maximum, characteristic of dense Kondo systems, is obtained in ρ4f at a temperature Tmax = 105 K for CeRhSi3 and at 130 K for CeIrSi3. Tmax decreases for both compounds with increased La concentration, x. X-ray powder diffraction was used to measure the increase in tetragonal unit cell volume V for the (Ce1-xLax)TSi3 alloys with increase in x. The compressible Kondo model is applied to describe our results of Tmax(x) in terms of the on-site Kondo exchange interaction J and the electronic density of states N(EF) at the Fermi level. The experimental results yield |JN(EF)|x = 0 = 0.072±0.016 for CeRhSi3 and 0.070±0.001 for CeIrSi3.

AB - The electrical resistivities of the pseudo-ternary alloys (Ce1-xLax)TSi3 (T = Rh, Ir;0≤x≤1) are reported. The 4f-derived part of their resistivities, ρ4f, is found by subtracting the temperature-dependent part of the resistivity of LaTSi3. A maximum, characteristic of dense Kondo systems, is obtained in ρ4f at a temperature Tmax = 105 K for CeRhSi3 and at 130 K for CeIrSi3. Tmax decreases for both compounds with increased La concentration, x. X-ray powder diffraction was used to measure the increase in tetragonal unit cell volume V for the (Ce1-xLax)TSi3 alloys with increase in x. The compressible Kondo model is applied to describe our results of Tmax(x) in terms of the on-site Kondo exchange interaction J and the electronic density of states N(EF) at the Fermi level. The experimental results yield |JN(EF)|x = 0 = 0.072±0.016 for CeRhSi3 and 0.070±0.001 for CeIrSi3.

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DO - 10.1016/S0038-1098(00)00421-X

M3 - Article

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SN - 0038-1098

VL - 117

SP - 321

EP - 325

JO - Solid State Communications

JF - Solid State Communications

IS - 5

ER -

Electrical resistivity of the Kondo systems (Ce_1-xLa_x)TSi₃ (T = Rh, Ir)

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