Electrical properties of semiconducting CuGa0.5In0.5Se2 thin films

R. P. Pant; D. P. Singh; U. Dhawan; D. K. Suri

Electrical properties of semiconducting CuGa_0.5In_0.5Se₂ thin films

R. P. Pant, D. P. Singh, U. Dhawan, D. K. Suri

CSIR - National Physical Laboratory

Research output: Contribution to journal › Conference article › peer-review

Abstract

CuGa_xIn_1-xSe₂ crystallizes in the chalcopyrite structure and is a potential absorber material for the fabrication of heterojunction solar cells. In this paper the electrical properties of CuGa_0.5In_0.5Se₂ polycrystalline thin films, prepared by thermal evaporation method, have been investigated. The resistivity and the thermoelectric power was measured in the temperature range 300 to 475 K and the conductivity, carrier (hole) and mobility activation energies were determined. Variation of these parameters exhibit exponential dependence on the inverse temperature which are indicative of grain boundary scattering mechanism.

Original language	English
Pages (from-to)	I/-
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3975
Publication status	Published - 2000
Externally published	Yes
Event	IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices - New Delhi, India Duration: 14 Dec 1999 → 18 Dec 1999

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

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title = "Electrical properties of semiconducting CuGa0.5In0.5Se2 thin films",

abstract = "CuGaxIn1-xSe2 crystallizes in the chalcopyrite structure and is a potential absorber material for the fabrication of heterojunction solar cells. In this paper the electrical properties of CuGa0.5In0.5Se2 polycrystalline thin films, prepared by thermal evaporation method, have been investigated. The resistivity and the thermoelectric power was measured in the temperature range 300 to 475 K and the conductivity, carrier (hole) and mobility activation energies were determined. Variation of these parameters exhibit exponential dependence on the inverse temperature which are indicative of grain boundary scattering mechanism.",

author = "Pant, {R. P.} and Singh, {D. P.} and U. Dhawan and Suri, {D. K.}",

year = "2000",

language = "English",

volume = "3975",

pages = "I/--",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices ; Conference date: 14-12-1999 Through 18-12-1999",

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TY - JOUR

T1 - Electrical properties of semiconducting CuGa0.5In0.5Se2 thin films

AU - Pant, R. P.

AU - Singh, D. P.

AU - Dhawan, U.

AU - Suri, D. K.

PY - 2000

Y1 - 2000

N2 - CuGaxIn1-xSe2 crystallizes in the chalcopyrite structure and is a potential absorber material for the fabrication of heterojunction solar cells. In this paper the electrical properties of CuGa0.5In0.5Se2 polycrystalline thin films, prepared by thermal evaporation method, have been investigated. The resistivity and the thermoelectric power was measured in the temperature range 300 to 475 K and the conductivity, carrier (hole) and mobility activation energies were determined. Variation of these parameters exhibit exponential dependence on the inverse temperature which are indicative of grain boundary scattering mechanism.

AB - CuGaxIn1-xSe2 crystallizes in the chalcopyrite structure and is a potential absorber material for the fabrication of heterojunction solar cells. In this paper the electrical properties of CuGa0.5In0.5Se2 polycrystalline thin films, prepared by thermal evaporation method, have been investigated. The resistivity and the thermoelectric power was measured in the temperature range 300 to 475 K and the conductivity, carrier (hole) and mobility activation energies were determined. Variation of these parameters exhibit exponential dependence on the inverse temperature which are indicative of grain boundary scattering mechanism.

UR - http://www.scopus.com/inward/record.url?scp=0033707578&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033707578

SN - 0277-786X

VL - 3975

SP - I/-

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - IWPSD-99: The 10th International Workshop on the Physics of Semiconductor Devices

Y2 - 14 December 1999 through 18 December 1999

ER -

Electrical properties of semiconducting CuGa_0.5In_0.5Se₂ thin films

Abstract

ASJC Scopus subject areas

UN SDGs

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