Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells

P. S. Mbule; T. H. Kim; B. S. Kim; U. C. Swart; O. M. Ntwaeaborwa

Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells

P. S. Mbule
, T. H. Kim
, B. S. Kim
, U. C. Swart
, O. M. Ntwaeaborwa

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from ²⁷A1, ¹⁶O, ¹²C ³²S, ⁶⁴Zn, ²⁸Si, ¹²⁰Sn and ¹¹⁵In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.

Original language	English
Title of host publication	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Pages	113-116
Number of pages	4
Publication status	Published - 2013
Externally published	Yes
Event	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 - Washington, DC, United States Duration: 12 May 2013 → 16 May 2013

Publication series

Name	Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Volume	1

Conference

Conference	Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Country/Territory	United States
City	Washington, DC
Period	12/05/13 → 16/05/13

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Depth profile
Organic solar cells
Photovoltaics
Power conversion efficiency
Zinc oxide

ASJC Scopus subject areas

Biotechnology

Cite this

Mbule, P. S., Kim, T. H., Kim, B. S., Swart, U. C., & Ntwaeaborwa, O. M. (2013). Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells. In Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 (pp. 113-116). (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).

@inproceedings{f04258505b7b4823bae9c266fdb800e5,

title = "Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells",

abstract = "In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from 27A1, 16O, 12C 32S, 64Zn, 28Si, 120Sn and 115In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.",

keywords = "Depth profile, Organic solar cells, Photovoltaics, Power conversion efficiency, Zinc oxide",

author = "Mbule, \{P. S.\} and Kim, \{T. H.\} and Kim, \{B. S.\} and Swart, \{U. C.\} and Ntwaeaborwa, \{O. M.\}",

year = "2013",

language = "English",

isbn = "9781482205817",

series = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

pages = "113--116",

booktitle = "Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013",

note = "Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013 ; Conference date: 12-05-2013 Through 16-05-2013",

}

Mbule, PS, Kim, TH, Kim, BS, Swart, UC & Ntwaeaborwa, OM 2013, Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells. in Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, vol. 1, pp. 113-116, Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013, Washington, DC, United States, 12/05/13.

Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells. / Mbule, P. S.; Kim, T. H.; Kim, B. S. et al.
Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. 2013. p. 113-116 (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells

AU - Mbule, P. S.

AU - Kim, T. H.

AU - Kim, B. S.

AU - Swart, U. C.

AU - Ntwaeaborwa, O. M.

PY - 2013

Y1 - 2013

N2 - In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from 27A1, 16O, 12C 32S, 64Zn, 28Si, 120Sn and 115In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.

AB - In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from 27A1, 16O, 12C 32S, 64Zn, 28Si, 120Sn and 115In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.

KW - Depth profile

KW - Organic solar cells

KW - Photovoltaics

KW - Power conversion efficiency

KW - Zinc oxide

UR - https://www.scopus.com/pages/publications/84881098133

M3 - Conference contribution

AN - SCOPUS:84881098133

SN - 9781482205817

T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

SP - 113

EP - 116

BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

T2 - Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013

Y2 - 12 May 2013 through 16 May 2013

ER -

Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

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Cite this