TY - GEN
T1 - Effects of ZnO buffer layer and depth profiling analysis of bulk heterojunction organic solar cells
AU - Mbule, P. S.
AU - Kim, T. H.
AU - Kim, B. S.
AU - Swart, U. C.
AU - Ntwaeaborwa, O. M.
PY - 2013
Y1 - 2013
N2 - In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from 27A1, 16O, 12C 32S, 64Zn, 28Si, 120Sn and 115In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.
AB - In this study, bulk heterojunction (BHJ) organic solar cells (OSCs) with a ZnO nanoparticle buffer layer were fabricated. The BHJ-OSCs comprised of poly(3-hexylthiophene) (P3HT) and [6, 6]-phenyl butyric acid methyl ester (PCBM) as photoactive layer blend on the substrate coated with a hole transporting layer poly (3, 4ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) followed by a ZnO nanoparticle buffer layer and Al layer. The devices were then annealed at 155 °C before (device A) and after (device B) the deposition of the Al electrode. Device A (annealed device) showed improved photovoltaic (PV) characteristics when compared to Device B. Depth profile analysis/interface analysis and elemental mapping of BHJ-OSCs was performed by time-of-flight secondary ion mass spectrometry (TOF-SIMS). Signals arising from 27A1, 16O, 12C 32S, 64Zn, 28Si, 120Sn and 115In allowed us to clearly identify the ITO, PEDOT:PSS, P3HT:PCBM, ZnO and Al cathode layers, respectively. The effect of post-fabrcation annealing on PV characteristics of the BHJ-OSC devices are discussed.
KW - Depth profile
KW - Organic solar cells
KW - Photovoltaics
KW - Power conversion efficiency
KW - Zinc oxide
UR - https://www.scopus.com/pages/publications/84881098133
M3 - Conference contribution
AN - SCOPUS:84881098133
SN - 9781482205817
T3 - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
SP - 113
EP - 116
BT - Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
T2 - Nanotechnology 2013: Advanced Materials, CNTs, Particles, Films and Composites - 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013
Y2 - 12 May 2013 through 16 May 2013
ER -
