Effects of deposition environment and temperature on photoluminescence, particle morphology, and crystal structure of pulsed laser deposited Ga₂O₃thin films

Engineering

• Crystal Structure 100%
• Nanoparticle 100%
• Deposited Film 100%
• Pulsed Laser 100%
• Energy Engineering 50%
• Ray Photoelectron Spectroscopy 50%
• Peak Intensity 50%
• Mixed Phase 50%
• Substrate Temperature 50%
• Low-Temperature 50%
• Deposition Temperature 50%
• Deposition Condition 50%
• Field Emission Scanning Electron Microscope 50%
• X-Ray Diffraction Pattern 50%
• Thin Films 50%
• Surface Morphology 50%
• Atomic Force Microscopy 50%
• Oxygen (O2) 50%
• Surface Topography 50%

Material Science

• Crystal Structure 100%
• Film 100%
• Photoluminescence 100%
• Particle Morphology 100%
• Scanning Electron Microscopy 28%
• Nanoparticle 28%
• Surface Morphology 14%
• X-Ray Diffraction 14%
• Diffraction Pattern 14%
• Pulsed Laser Deposition 14%
• Laser Ablation 14%
• Gallium 14%
• X-Ray Photoelectron Spectroscopy 14%
• Surface Topography 14%
• Oxide Compound 14%
• Thin Films 14%

Keyphrases

• Deposition Temperature 100%
• Deposition Environment 100%
• Ga2O3 66%
• Surface Topography 33%
• Si Impurity 33%
• C-Si 33%
• Cubic Shape 33%
• Gallium Oxide 33%
• Si (100) Substrate 33%
• Nanoparticle Shape 33%
• Different Substrate Temperature 33%
• β-Ga2O3 Thin Film 33%