Abstract
Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.
| Original language | English |
|---|---|
| Article number | 411713 |
| Journal | Physica B: Condensed Matter |
| Volume | 576 |
| DOIs | |
| Publication status | Published - 1 Jan 2020 |
| Externally published | Yes |
Keywords
- Oxygen partial pressure
- Pulsed laser deposition
- ZnO:Eu
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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