Effect of oxygen partial pressure during pulsed laser deposition on the emission of Eu doped ZnO thin films

Vinod Kumar; O. M. Ntwaeaborwa; H. C. Swart

doi:10.1016/j.physb.2019.411713

Effect of oxygen partial pressure during pulsed laser deposition on the emission of Eu doped ZnO thin films

Vinod Kumar, O. M. Ntwaeaborwa, H. C. Swart

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Eu³⁺ doped ZnO (ZnO:Eu³⁺) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu³⁺ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu³⁺ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu³⁺ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.

Original language	English
Article number	411713
Journal	Physica B: Condensed Matter
Volume	576
DOIs	https://doi.org/10.1016/j.physb.2019.411713
Publication status	Published - 1 Jan 2020
Externally published	Yes

Keywords

Oxygen partial pressure
Pulsed laser deposition
ZnO:Eu

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2019.411713

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title = "Effect of oxygen partial pressure during pulsed laser deposition on the emission of Eu doped ZnO thin films",

abstract = "Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.",

keywords = "Oxygen partial pressure, Pulsed laser deposition, ZnO:Eu",

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AU - Kumar, Vinod

AU - Ntwaeaborwa, O. M.

AU - Swart, H. C.

PY - 2020/1/1

Y1 - 2020/1/1

N2 - Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.

AB - Eu3+ doped ZnO (ZnO:Eu3+) thin films were prepared by pulsed laser deposition at different oxygen partial pressures. The all ZnO:Eu3+ thin films have a hexagonal structure. The morphology and roughness of the ZnO:Eu3+ thin film were also dependent on the partial pressure of the oxygen. The strong band to band emission was observed with the weak emission of both Eu3+ and defects. The intensity of the band emission peaks has increased with an increase in the oxygen partial pressure.

KW - Oxygen partial pressure

KW - Pulsed laser deposition

KW - ZnO:Eu

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JF - Physica B: Condensed Matter

M1 - 411713

ER -

Effect of oxygen partial pressure during pulsed laser deposition on the emission of Eu doped ZnO thin films

Abstract

Keywords

ASJC Scopus subject areas

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