Effect of Ni doping on thick film SnO2 gas sensor

Kiran Jain, R. P. Pant, S. T. Lakshmikumar

Research output: Contribution to journalArticlepeer-review

183 Citations (Scopus)

Abstract

Ni- and/or Al-doped and undoped SnO2 thick film gas sensors were prepared using screen printing technique and tested for their LPG gas sensitivity. Tin oxide powder was prepared using a chemical precipitation technique. The sensitivity, optimum working temperature and response time were investigated in relation to dopants as well as preparation route. The results show that the gas sensitivity is affected not only by the additive but the way it is added into the sensor material. The results indicated a reduction in grain size on Al and Ni doping. The results on resistance, response and recovery time were explained in terms of n-p junction formation between SnO2 and NiO, which increases the depletion barrier height.

Original languageEnglish
Pages (from-to)823-829
Number of pages7
JournalSensors and Actuators B: Chemical
Volume113
Issue number2
DOIs
Publication statusPublished - 27 Feb 2006
Externally publishedYes

Keywords

  • Gas sensor
  • Ni doping
  • SnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering
  • Materials Chemistry

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