@inproceedings{7966fa4cf163474eb32aa9165b961242,
title = "Effect of gate finger on double-gate MOSFET for RF switch at 45-nm technology",
abstract = "In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.",
keywords = "45-nm technology, CMOS, Double-gate MOSFET, Gate finger, RF switch, Radio frequency, VLSI",
author = "Srivastava, {Viranjay M.} and G. Singh and Yadav, {K. S.}",
year = "2011",
doi = "10.1109/CSNT.2011.101",
language = "English",
isbn = "9780769544373",
series = "Proceedings - 2011 International Conference on Communication Systems and Network Technologies, CSNT 2011",
pages = "464--468",
booktitle = "Proceedings - 2011 International Conference on Communication Systems and Network Technologies, CSNT 2011",
note = "2011 International Conference on Communication Systems and Network Technologies, CSNT 2011 ; Conference date: 03-06-2011 Through 05-06-2011",
}