Effect of Ga3+ doping on the photoluminescence properties of Y3Al5-xGaxO12:Bi3+ phosphor

A. Yousif, Vinod Kumar, H. A.A. Seed Ahmed, S. Som, L. L. Noto, O. M. Ntwaeaborwa, H. C. Swart

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33 Citations (Scopus)

Abstract

The structural and luminescence characteristics of a sol-gel combustion synthesized Y3Al5-xGaxO12:Bi3+ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga3+ concentration.

Original languageEnglish
Pages (from-to)R222-R227
JournalECS Journal of Solid State Science and Technology
Volume3
Issue number11
DOIs
Publication statusPublished - 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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