Effect of Ga3+ doping on the photoluminescence properties of Y3Al5-xGaxO12:Bi3+ phosphor

A. Yousif; Vinod Kumar; H. A.A. Seed Ahmed; S. Som; L. L. Noto; O. M. Ntwaeaborwa; H. C. Swart

doi:10.1149/2.0021412jss

Effect of Ga₃₊ doping on the photoluminescence properties of Y₃Al_5-xGa_xO₁₂:Bi₃₊ phosphor

A. Yousif, Vinod Kumar, H. A.A. Seed Ahmed, S. Som, L. L. Noto, O. M. Ntwaeaborwa, H. C. Swart

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

The structural and luminescence characteristics of a sol-gel combustion synthesized Y₃Al_5-xGa_xO₁₂:Bi₃₊ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi₃₊ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga₃₊ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga₃₊ concentration.

Original language	English
Pages (from-to)	R222-R227
Journal	ECS Journal of Solid State Science and Technology
Volume	3
Issue number	11
DOIs	https://doi.org/10.1149/2.0021412jss
Publication status	Published - 2014
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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title = "Effect of Ga3+ doping on the photoluminescence properties of Y3Al5-xGaxO12:Bi3+ phosphor",

abstract = "The structural and luminescence characteristics of a sol-gel combustion synthesized Y3Al5-xGaxO12:Bi3+ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga3+ concentration.",

author = "A. Yousif and Vinod Kumar and {Seed Ahmed}, {H. A.A.} and S. Som and Noto, {L. L.} and Ntwaeaborwa, {O. M.} and Swart, {H. C.}",

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doi = "10.1149/2.0021412jss",

language = "English",

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T1 - Effect of Ga3+ doping on the photoluminescence properties of Y3Al5-xGaxO12:Bi3+ phosphor

AU - Yousif, A.

AU - Kumar, Vinod

AU - Seed Ahmed, H. A.A.

AU - Som, S.

AU - Noto, L. L.

AU - Ntwaeaborwa, O. M.

AU - Swart, H. C.

PY - 2014

Y1 - 2014

N2 - The structural and luminescence characteristics of a sol-gel combustion synthesized Y3Al5-xGaxO12:Bi3+ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga3+ concentration.

AB - The structural and luminescence characteristics of a sol-gel combustion synthesized Y3Al5-xGaxO12:Bi3+ phosphor with different concentration of Ga3+were investigated. The Rietveld refinement analysis and luminescence studies indicated that increasing the concentration of the Ga ions changed the bond lengths and lattice parameters of the dodecahedron bonds and as a result the Bi3+ experienced a different anionic environment in the YAG host. A systematic shift of the photoluminescence excitation and emission spectra to higher wavelengths was observed with an increase of the Ga3+ concentration. The shift is attributed to the distortion of the host lattice as observed from the changing parameter and the covalency of the host with an increase of the Ga3+ concentration.

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Effect of Ga₃₊ doping on the photoluminescence properties of Y₃Al_5-xGa_xO₁₂:Bi₃₊ phosphor

Abstract

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