Effect of Br                         +6                          ions on the structural, morphological and luminescent properties of ZnO/Si thin films

Vinod Kumar; Fouran Singh; O. M. Ntwaeaborwa; H. C. Swart

doi:10.1016/j.apsusc.2013.04.145

Effect of Br ⁺⁶ ions on the structural, morphological and luminescent properties of ZnO/Si thin films

Vinod Kumar, Fouran Singh, O. M. Ntwaeaborwa, H. C. Swart

Research output: Contribution to journal › Article › peer-review

68 Citations (Scopus)

Abstract

ZnO/Si thin films were synthesized by radio frequency (RF) magnetron sputtering. The films were irradiated by 80 meV Br ⁺⁶ ions at various ion fluencies. X-ray diffraction (XRD) indicated that hexagonal wurtzite crystal structured thin films were obtained. X-ray photoelectron spectroscopy (XPS) indicated that the O1s peak consist of two components: O1 (ZnO) and O3 (adsorbed species). The roughness of the films changed from 34 to 24 nm with a variation in the ion fluence. The observation of the various phonon modes in the Raman spectra of the ZnO confirmed that the ZnO on Si films have wurtzite structures according to the selection rules. Defect level emission (DLE) was obtained in the luminescence spectra of the irradiated ZnO/Si sample. The thermal spikes model was used to explain the swift heavy ions (SHI) induced modifications in the structural, morphological and luminescent properties of the ZnO/Si films.

Original language	English
Pages (from-to)	472-478
Number of pages	7
Journal	Applied Surface Science
Volume	279
DOIs	https://doi.org/10.1016/j.apsusc.2013.04.145
Publication status	Published - 15 Aug 2013
Externally published	Yes

Keywords

RF magnetron sputtering
Thermal spikes model
XPS Swift heavy ions
ZnO/Si

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2013.04.145

Cite this

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title = " Effect of Br +6 ions on the structural, morphological and luminescent properties of ZnO/Si thin films ",

abstract = " ZnO/Si thin films were synthesized by radio frequency (RF) magnetron sputtering. The films were irradiated by 80 meV Br +6 ions at various ion fluencies. X-ray diffraction (XRD) indicated that hexagonal wurtzite crystal structured thin films were obtained. X-ray photoelectron spectroscopy (XPS) indicated that the O1s peak consist of two components: O1 (ZnO) and O3 (adsorbed species). The roughness of the films changed from 34 to 24 nm with a variation in the ion fluence. The observation of the various phonon modes in the Raman spectra of the ZnO confirmed that the ZnO on Si films have wurtzite structures according to the selection rules. Defect level emission (DLE) was obtained in the luminescence spectra of the irradiated ZnO/Si sample. The thermal spikes model was used to explain the swift heavy ions (SHI) induced modifications in the structural, morphological and luminescent properties of the ZnO/Si films.",

keywords = "RF magnetron sputtering, Thermal spikes model, XPS Swift heavy ions, ZnO/Si",

author = "Vinod Kumar and Fouran Singh and Ntwaeaborwa, {O. M.} and Swart, {H. C.}",

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doi = "10.1016/j.apsusc.2013.04.145",

language = "English",

volume = "279",

pages = "472--478",

journal = "Applied Surface Science",

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Effect of Br ⁺⁶ ions on the structural, morphological and luminescent properties of ZnO/Si thin films . / Kumar, Vinod; Singh, Fouran; Ntwaeaborwa, O. M. et al.
In: Applied Surface Science, Vol. 279, 15.08.2013, p. 472-478.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of Br +6 ions on the structural, morphological and luminescent properties of ZnO/Si thin films

AU - Kumar, Vinod

AU - Singh, Fouran

AU - Ntwaeaborwa, O. M.

AU - Swart, H. C.

PY - 2013/8/15

Y1 - 2013/8/15

N2 - ZnO/Si thin films were synthesized by radio frequency (RF) magnetron sputtering. The films were irradiated by 80 meV Br +6 ions at various ion fluencies. X-ray diffraction (XRD) indicated that hexagonal wurtzite crystal structured thin films were obtained. X-ray photoelectron spectroscopy (XPS) indicated that the O1s peak consist of two components: O1 (ZnO) and O3 (adsorbed species). The roughness of the films changed from 34 to 24 nm with a variation in the ion fluence. The observation of the various phonon modes in the Raman spectra of the ZnO confirmed that the ZnO on Si films have wurtzite structures according to the selection rules. Defect level emission (DLE) was obtained in the luminescence spectra of the irradiated ZnO/Si sample. The thermal spikes model was used to explain the swift heavy ions (SHI) induced modifications in the structural, morphological and luminescent properties of the ZnO/Si films.

AB - ZnO/Si thin films were synthesized by radio frequency (RF) magnetron sputtering. The films were irradiated by 80 meV Br +6 ions at various ion fluencies. X-ray diffraction (XRD) indicated that hexagonal wurtzite crystal structured thin films were obtained. X-ray photoelectron spectroscopy (XPS) indicated that the O1s peak consist of two components: O1 (ZnO) and O3 (adsorbed species). The roughness of the films changed from 34 to 24 nm with a variation in the ion fluence. The observation of the various phonon modes in the Raman spectra of the ZnO confirmed that the ZnO on Si films have wurtzite structures according to the selection rules. Defect level emission (DLE) was obtained in the luminescence spectra of the irradiated ZnO/Si sample. The thermal spikes model was used to explain the swift heavy ions (SHI) induced modifications in the structural, morphological and luminescent properties of the ZnO/Si films.

KW - RF magnetron sputtering

KW - Thermal spikes model

KW - XPS Swift heavy ions

KW - ZnO/Si

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