@inproceedings{3e110b198a834630ba3b9fcedcca78d9,
title = "Drain current and switching speed of the double-pole four-throw RF CMOS switch",
abstract = "Established RF CMOS switch contains MOSFET in its main architecture with a 5.0 V of control voltage and required high value of resistance in circuitry of transceivers to detect the signal. To avoid the high value of control voltage and those resistances, we proposed a Double-Pole Four-Throw switch using RF CMOS technology and verified its performance interns of currents and switching speed. Also to provide a plurality of such switches, where the power and area could be reduced as compared to already existing transceiver switch configuration, which is simply a reduction of signal strength during transmission for RF. Our result shows that the peak output currents in these devices are around 0.387 mA and the switching speed is 30-31 ps.",
keywords = "CMOS Switch, DP4T Switch, Drain current, RF Switch, Radio Frequency, Switching Speed, VLSI",
author = "Srivastava, {Viranjay M.} and G. Singh and Yadav, {K. S.}",
year = "2011",
doi = "10.1109/INDCON.2011.6139419",
language = "English",
isbn = "9781457711091",
series = "Proceedings - 2011 Annual IEEE India Conference: Engineering Sustainable Solutions, INDICON-2011",
booktitle = "Proceedings - 2011 Annual IEEE India Conference",
note = "2011 Annual IEEE India Conference: Engineering Sustainable Solutions, INDICON-2011 ; Conference date: 16-12-2011 Through 18-12-2011",
}