Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Viranjay M. Srivastava; K. S. Yadav; G. Singh

doi:10.1016/j.proeng.2012.06.064

Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Viranjay M. Srivastava, K. S. Yadav, G. Singh

Research output: Contribution to journal › Conference article › peer-review

23 Citations (Scopus)

Abstract

In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double- Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.

Original language	English
Pages (from-to)	517-521
Number of pages	5
Journal	Procedia Engineering
Volume	38
DOIs	https://doi.org/10.1016/j.proeng.2012.06.064
Publication status	Published - 2012
Externally published	Yes
Event	International Conference on Modelling Optimization and Computing - TamilNadu, India Duration: 10 Apr 2012 → 11 Apr 2012

Keywords

45-nm technology
CMOS
Double-gate MOSFET
Single-gate MOSFET
VLSI

ASJC Scopus subject areas

General Engineering

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10.1016/j.proeng.2012.06.064

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title = "Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch",

abstract = "In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double- Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.",

keywords = "45-nm technology, CMOS, Double-gate MOSFET, Single-gate MOSFET, VLSI",

author = "Srivastava, {Viranjay M.} and Yadav, {K. S.} and G. Singh",

year = "2012",

doi = "10.1016/j.proeng.2012.06.064",

language = "English",

volume = "38",

pages = "517--521",

journal = "Procedia Engineering",

issn = "1877-7058",

publisher = "Elsevier BV",

note = "International Conference on Modelling Optimization and Computing ; Conference date: 10-04-2012 Through 11-04-2012",

}

TY - JOUR

T1 - Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

AU - Srivastava, Viranjay M.

AU - Yadav, K. S.

AU - Singh, G.

PY - 2012

Y1 - 2012

N2 - In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double- Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.

AB - In this paper, we have explored the drain current model and subthreshold model of Cylindrical Surrounding Double- Gate (CSDG) MOSFETs, for the wireless telecommunication systems to operate at the microwave frequency regime of the spectrum. This CSDG MOSFET can be used as the RF switch for selecting the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the drain current with DIBL and SCE, for the integrated circuit of the radio frequency sub-system. Using this device we analyzed that the drain current is higher, output conductance is lower which shows that the isolation is better in CSDG MOSFET as compared to double-gate MOSFET and single-gate MOSFET.

KW - 45-nm technology

KW - CMOS

KW - Double-gate MOSFET

KW - Single-gate MOSFET

KW - VLSI

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U2 - 10.1016/j.proeng.2012.06.064

DO - 10.1016/j.proeng.2012.06.064

M3 - Conference article

AN - SCOPUS:84876285529

SN - 1877-7058

VL - 38

SP - 517

EP - 521

JO - Procedia Engineering

JF - Procedia Engineering

T2 - International Conference on Modelling Optimization and Computing

Y2 - 10 April 2012 through 11 April 2012

ER -

Drain current and noise model of cylindrical surrounding double-gate MOSFET for RF switch

Abstract

Keywords

ASJC Scopus subject areas

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