DP4T RF CMOS switch: A better option to replace the SPDT switch and DPDT switch

Viranjay M. Srivastava, Kalyan S. Yadav, Ghanshyam Singh

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


In this paper we have explored the design of double-pole four-throw (DP4T) RF CMOS switch at 45-nm technology and analyzed the better drain current and switching speed as compared to the existing single-pole double-throw (SPDT) switch and double-pole double-throw (DPDT) switch. For the proposed DP4T RF CMOS switch results the peak output currents around 0.387 mA and switching speed of 36 ps. We are using the CMOS inverter propertied to some extent to design this DP4T switch. This article deals with the evolution of RF switches and its design through reviewing available patents and introduces the latest applications of proposed switch.

Original languageEnglish
Pages (from-to)244-248
Number of pages5
JournalRecent Patents on Electrical and Electronic Engineering
Issue number3
Publication statusPublished - 2012
Externally publishedYes


  • DP4T switch
  • RF CMOS switch
  • Single-gate MOSEFT
  • VLSI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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