Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Viranjay M. Srivastava, Ghanshyam Singh

Research output: Chapter in Book/Report/Conference proceedingChapterpeer-review


In this chapter, we have designed a double-pole four-throw radio-frequency switch using double-gate (DP4T DG RF) MOSFET to operate at 0.1 GHz to few GHz frequency range for the advanced wireless communication systems. This switch mitigates attenuation of passing signals and exhibits high isolation to avoid misleading of simultaneously received signals. The symmetric DG MOSFET has been the focus of much attention for the application of RF switch due to its ability of strength to short-channel effects and improved current driving capability as discussed in the previous chapters.

Original languageEnglish
Title of host publicationAnalog Circuits and Signal Processing
Number of pages25
Publication statusPublished - 2014
Externally publishedYes

Publication series

NameAnalog Circuits and Signal Processing
ISSN (Print)1872-082X
ISSN (Electronic)2197-1854


  • Drain Current
  • Insertion Loss
  • Phase Noise
  • Return Loss
  • Switching Speed

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Information Systems
  • Signal Processing


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