Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Viranjay M. Srivastava; Ghanshyam Singh

doi:10.1007/978-3-319-01165-3_4

Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Viranjay M. Srivastava, Ghanshyam Singh

Jaypee University of Information Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

In this chapter, we have designed a double-pole four-throw radio-frequency switch using double-gate (DP4T DG RF) MOSFET to operate at 0.1 GHz to few GHz frequency range for the advanced wireless communication systems. This switch mitigates attenuation of passing signals and exhibits high isolation to avoid misleading of simultaneously received signals. The symmetric DG MOSFET has been the focus of much attention for the application of RF switch due to its ability of strength to short-channel effects and improved current driving capability as discussed in the previous chapters.

Original language	English
Title of host publication	Analog Circuits and Signal Processing
Publisher	Springer
Pages	85-109
Number of pages	25
DOIs	https://doi.org/10.1007/978-3-319-01165-3_4
Publication status	Published - 2014
Externally published	Yes

Publication series

Name	Analog Circuits and Signal Processing
Volume	122
ISSN (Print)	1872-082X
ISSN (Electronic)	2197-1854

Keywords

Drain Current
Insertion Loss
Phase Noise
Return Loss
Switching Speed

ASJC Scopus subject areas

Electrical and Electronic Engineering
Information Systems
Signal Processing

Access to Document

10.1007/978-3-319-01165-3_4

Cite this

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abstract = "In this chapter, we have designed a double-pole four-throw radio-frequency switch using double-gate (DP4T DG RF) MOSFET to operate at 0.1 GHz to few GHz frequency range for the advanced wireless communication systems. This switch mitigates attenuation of passing signals and exhibits high isolation to avoid misleading of simultaneously received signals. The symmetric DG MOSFET has been the focus of much attention for the application of RF switch due to its ability of strength to short-channel effects and improved current driving capability as discussed in the previous chapters.",

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AB - In this chapter, we have designed a double-pole four-throw radio-frequency switch using double-gate (DP4T DG RF) MOSFET to operate at 0.1 GHz to few GHz frequency range for the advanced wireless communication systems. This switch mitigates attenuation of passing signals and exhibits high isolation to avoid misleading of simultaneously received signals. The symmetric DG MOSFET has been the focus of much attention for the application of RF switch due to its ability of strength to short-channel effects and improved current driving capability as discussed in the previous chapters.

KW - Drain Current

KW - Insertion Loss

KW - Phase Noise

KW - Return Loss

KW - Switching Speed

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ER -

Double-Pole Four-Throw RF Switch Based on Double-Gate MOSFET

Abstract

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Keywords

ASJC Scopus subject areas

Access to Document

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