Double-Pole Four-Throw RF CMOS switch design with double-gate transistors

Viranjay M. Srivastava; K. S. Yadav; G. Singh

doi:10.1109/INDCON.2010.5712754

Double-Pole Four-Throw RF CMOS switch design with double-gate transistors

Viranjay M. Srivastava, K. S. Yadav, G. Singh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

12 Citations (Scopus)

Abstract

In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.

Original language	English
Title of host publication	Proceedings of the 2010 Annual IEEE India Conference
Subtitle of host publication	Green Energy, Computing and Communication, INDICON 2010
DOIs	https://doi.org/10.1109/INDCON.2010.5712754
Publication status	Published - 2010
Externally published	Yes
Event	2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010 - Kolkata, India Duration: 17 Dec 2010 → 19 Dec 2010

Publication series

Name	Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010

Conference

Conference	2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010
Country/Territory	India
City	Kolkata
Period	17/12/10 → 19/12/10

Keywords

CMOS
CMOS Switch
DP4T Switch
Double-gate MOSFET
Independent Gate Configuration
Power
RF Switch
Tied Gate Configuration
VLSI
VSFET

ASJC Scopus subject areas

Computer Networks and Communications
Renewable Energy, Sustainability and the Environment

Access to Document

10.1109/INDCON.2010.5712754

Cite this

Srivastava, V. M., Yadav, K. S., & Singh, G. (2010). Double-Pole Four-Throw RF CMOS switch design with double-gate transistors. In Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010 Article 5712754 (Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010). https://doi.org/10.1109/INDCON.2010.5712754

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title = "Double-Pole Four-Throw RF CMOS switch design with double-gate transistors",

abstract = "In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.",

keywords = "CMOS, CMOS Switch, DP4T Switch, Double-gate MOSFET, Independent Gate Configuration, Power, RF Switch, Tied Gate Configuration, VLSI, VSFET",

author = "Srivastava, {Viranjay M.} and Yadav, {K. S.} and G. Singh",

year = "2010",

doi = "10.1109/INDCON.2010.5712754",

language = "English",

isbn = "9781424490745",

series = "Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010",

booktitle = "Proceedings of the 2010 Annual IEEE India Conference",

note = "2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010 ; Conference date: 17-12-2010 Through 19-12-2010",

}

Srivastava, VM, Yadav, KS & Singh, G 2010, Double-Pole Four-Throw RF CMOS switch design with double-gate transistors. in Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010., 5712754, Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010, 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010, Kolkata, India, 17/12/10. https://doi.org/10.1109/INDCON.2010.5712754

Double-Pole Four-Throw RF CMOS switch design with double-gate transistors. / Srivastava, Viranjay M.; Yadav, K. S.; Singh, G.
Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010. 2010. 5712754 (Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Srivastava, Viranjay M.

AU - Yadav, K. S.

AU - Singh, G.

PY - 2010

Y1 - 2010

N2 - In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.

AB - In this paper, we have explored the design features of a Double-Pole Four-Throw (DP4T) RF CMOS switch with use of a novel Vertical Slit Field Effect Transistor (VSFET). This proposed switch circuit uses the double-gate which minimizes the number of transistors and increases the logic density of the transistor per unit area as compare to simple switch. These double gates are independently controlled. This will provide a switch with a drive circuit that free from signal propagation delay and additional voltage power supply. Further, main objective is to provide a plurality of such switches arranged in a densely configured switch array, where the power and circuit area is reduced as compared to a tied gate configuration.

KW - CMOS

KW - CMOS Switch

KW - DP4T Switch

KW - Double-gate MOSFET

KW - Independent Gate Configuration

KW - Power

KW - RF Switch

KW - Tied Gate Configuration

KW - VLSI

KW - VSFET

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SN - 9781424490745

T3 - Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010

BT - Proceedings of the 2010 Annual IEEE India Conference

T2 - 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010

Y2 - 17 December 2010 through 19 December 2010

ER -

Srivastava VM, Yadav KS, Singh G. Double-Pole Four-Throw RF CMOS switch design with double-gate transistors. In Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010. 2010. 5712754. (Proceedings of the 2010 Annual IEEE India Conference: Green Energy, Computing and Communication, INDICON 2010). doi: 10.1109/INDCON.2010.5712754

Double-Pole Four-Throw RF CMOS switch design with double-gate transistors

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Keywords

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