Designing parameters for RF MOS cells

Viranjay M. Srivastava, G. Singh, K. S. Yadav

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties for RF circuit design standard and measurement outcomes are presented. The cell parameters presented here are calculated (designed) using 2.0 μm and 0.8 μm technology MOS integrated circuit. In this paper we discussed and found better result in terms of drain current for gate voltage of 2.1 V compare to 1.2 V, calculate the power for these voltages and time constant with help of contact resistance and capacitances [1].

Original languageEnglish
Title of host publication2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010
Pages259-262
Number of pages4
DOIs
Publication statusPublished - 2010
Externally publishedYes
Event2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010 - Rourkela, India
Duration: 27 Dec 201029 Dec 2010

Publication series

Name2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010

Conference

Conference2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010
Country/TerritoryIndia
CityRourkela
Period27/12/1029/12/10

Keywords

  • Cell Library
  • Contact resistance of MOS
  • MOSFET
  • Radio frequency
  • VLSI
  • Voltage-Current Curve

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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