@inproceedings{3ea19bc3a9434b438f6a63dc56f4ac3e,
title = "Designing parameters for RF MOS cells",
abstract = "Demand of radio frequency switches using Metal-Oxide-Semiconductor (MOS) technology at high-frequencies for wireless telecommunication system is increasing drastically. This paper presents the results for the development of a cell library that includes the basics of the design parameters for n-MOS transistor and p-MOS transistor to design a RF CMOS switch. The cell library design includes the properties for RF circuit design standard and measurement outcomes are presented. The cell parameters presented here are calculated (designed) using 2.0 μm and 0.8 μm technology MOS integrated circuit. In this paper we discussed and found better result in terms of drain current for gate voltage of 2.1 V compare to 1.2 V, calculate the power for these voltages and time constant with help of contact resistance and capacitances [1].",
keywords = "Cell Library, Contact resistance of MOS, MOSFET, Radio frequency, VLSI, Voltage-Current Curve",
author = "Srivastava, {Viranjay M.} and G. Singh and Yadav, {K. S.}",
year = "2010",
doi = "10.1109/IECR.2010.5720126",
language = "English",
isbn = "9781424485468",
series = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010",
pages = "259--262",
booktitle = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010",
note = "2010 International Conference on Industrial Electronics, Control and Robotics, IECR 2010 ; Conference date: 27-12-2010 Through 29-12-2010",
}