TY - CHAP
T1 - Design of Double-Pole Four-Throw RF Switch
AU - Srivastava, Viranjay M.
AU - Singh, Ghanshyam
N1 - Publisher Copyright:
© 2014, Springer International Publishing Switzerland.
PY - 2014
Y1 - 2014
N2 - The industrial, scientific, and medical (ISM) radio bands were originally reserved for the use of radio-frequency (RF) energy for industrial, scientific, and medical purposes such as radio-frequency process heating, microwave ovens, and medical diathermy machines. The powerful emissions of these devices can create electromagnetic interference and disrupt radio communication using the same frequency, so these devices were limited to certain bands of frequencies. In general, communication equipment operating in these bands must accept any interference generated by ISM equipment [1, 2]. Nowadays CMOS wideband switches are designed primarily to meet the requirements of devices transmitting at ISM band frequencies (900 MHz and above). The low insertion loss, high isolation between ports, low distortion, and low current consumption of these devices make them an excellent solution for several high-frequency applications [3].
AB - The industrial, scientific, and medical (ISM) radio bands were originally reserved for the use of radio-frequency (RF) energy for industrial, scientific, and medical purposes such as radio-frequency process heating, microwave ovens, and medical diathermy machines. The powerful emissions of these devices can create electromagnetic interference and disrupt radio communication using the same frequency, so these devices were limited to certain bands of frequencies. In general, communication equipment operating in these bands must accept any interference generated by ISM equipment [1, 2]. Nowadays CMOS wideband switches are designed primarily to meet the requirements of devices transmitting at ISM band frequencies (900 MHz and above). The low insertion loss, high isolation between ports, low distortion, and low current consumption of these devices make them an excellent solution for several high-frequency applications [3].
KW - CMOS Switch
KW - GaAs MESFET
KW - Insertion Loss
KW - Negative Bias Temperature Instability
KW - Power Handling Capability
UR - http://www.scopus.com/inward/record.url?scp=85103875472&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-01165-3_2
DO - 10.1007/978-3-319-01165-3_2
M3 - Chapter
AN - SCOPUS:85103875472
T3 - Analog Circuits and Signal Processing
SP - 23
EP - 43
BT - Analog Circuits and Signal Processing
PB - Springer
ER -