Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Viranjay M. Srivastava, K. S. Yadav, G. Singh

Research output: Contribution to journalArticlepeer-review

62 Citations (Scopus)

Abstract

In this paper, we have designed a double-gate MOSFET and compared its performance parameters with the single-gate MOSFET as RF CMOS switch, particularly the double-pole four-throw (DP4T) switch, for the wireless telecommunication systems. A double-gate radio-frequency complementary metal-oxide-semiconductor (DG RF CMOS) switch operating at the frequency of microwave range is investigated. This RF switch is capable to select the data streams from antennas for both the transmitting and receiving processes. We emphasize on the basics of the circuit elements (such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, and switching speed) required for the integrated circuit of the radio frequency sub-system of the DG RF CMOS switch and the role of these basic circuit elements are also discussed. These properties presented in the switches due to the double-gate MOSFET and single-gate MOSFET have been discussed.

Original languageEnglish
Pages (from-to)527-534
Number of pages8
JournalMicroelectronics Journal
Volume42
Issue number3
DOIs
Publication statusPublished - Mar 2011
Externally publishedYes

Keywords

  • CMOS switch
  • DP4T switch
  • Double-gate MOSFET
  • RF switch
  • Radio frequency
  • Symmetric gate configuration
  • VLSI

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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