Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch

Engineering

• Performance Analysis 100%
• Metal-Oxide-Semiconductor Field-Effect Transistor 100%
• Design Analysis 100%
• Stored Energy 11%
• Circuit Element 11%
• Energy Engineering 5%
• Subsystems 5%
• Design Parameter 5%
• Integrated Circuit 5%
• Current Drain 5%
• Switching Speed 5%
• Resonant Frequency 5%
• Wireless Telecommunication Systems 5%
• Current Flow 5%
• Current Threshold 5%
• Physical Significance 5%
• Crosstalk 5%
• Radio Frequency 5%

Keyphrases

• Total Capacitance 11%
• CMOS Devices 11%