Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch

In this paper, we have analyzed the design parameters of Cylindrical Surrounding Double-Gate (CSDG) MOSFETs as an RF switch for the advanced wireless telecommunication systems. The proposed CSDG RF MOSFET is operated at the microwave regime of the spectrum. We emphasize on the basics of the circuit elements such as drain current, threshold voltage, resonant frequency, resistances at switch ON condition, capacitances, energy stored, cross talk and switching speed required for the integrated circuit of the radio frequency sub-system of the CSDG RF CMOS device and the physical significance of these basic circuit elements is also discussed. We observed that the total capacitance between the source to drain for the proposed CSDG MOSFET is more compared to the Cylindrical Surrounding Single-Gate (CSSG) MOSFET due to the greater drain current passing area of the CSDG MOSFET, which reveals that the isolation is better in the CSDG MOSFET compared to that of the simple double-gate MOSFET and single-gate MOSFET. We analyzed that the CSDG MOSFET stores more energy (1.4 times) as compared to the CSSG MOSFET. Therefore, the CSDG MOSFET has more stored energy. The ON-resistance of CSDG MOSFET is half than that of the double-gate MOSFET and single-gate MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than the double-gate MOSFET and single-gate MOSFET.