Deposition of CuIn(Se, S)2 thin films by sulfurization of selenized Cu/In alloys

C. J. Sheppard, V. Alberts, W. J. Bekker

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)


The relatively small band gap values (close to 1eV) of CuInSe2 thin films limits the conversion efficiencies of completed CuInSe 2/CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H2Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe2 structures. These films were subsequently exposed to a H2S/Ar atmosphere to produce monophasic CuIn(Se, S)2 quaternary alloys. The homogeneous incorporation of S into CuInSe2 led to a systematic shift in the lattice parameters and band gap of the absorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se, S)2 thin films with an optimum band gap values between 1.15 and 1.2eV.

Original languageEnglish
Pages (from-to)2234-2238
Number of pages5
JournalPhysica Status Solidi C: Conferences
Issue number9
Publication statusPublished - 2004

ASJC Scopus subject areas

  • Condensed Matter Physics


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