Deposition of CuIn(Se, S)2 thin films by sulfurization of selenized Cu/In alloys

C. J. Sheppard; V. Alberts; W. J. Bekker

doi:10.1002/pssa.200404817

Deposition of CuIn(Se, S)₂ thin films by sulfurization of selenized Cu/In alloys

C. J. Sheppard, V. Alberts, W. J. Bekker

Physics

University of Johannesburg

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

The relatively small band gap values (close to 1eV) of CuInSe₂ thin films limits the conversion efficiencies of completed CuInSe ₂/CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H₂Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe₂ structures. These films were subsequently exposed to a H₂S/Ar atmosphere to produce monophasic CuIn(Se, S)₂ quaternary alloys. The homogeneous incorporation of S into CuInSe₂ led to a systematic shift in the lattice parameters and band gap of the absorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se, S)₂ thin films with an optimum band gap values between 1.15 and 1.2eV.

Original language	English
Pages (from-to)	2234-2238
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Volume	1
Issue number	9
DOIs	https://doi.org/10.1002/pssa.200404817
Publication status	Published - 2004

ASJC Scopus subject areas

Condensed Matter Physics

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1002/pssa.200404817

Cite this

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abstract = "The relatively small band gap values (close to 1eV) of CuInSe2 thin films limits the conversion efficiencies of completed CuInSe 2/CdS/ZnO solar cell devices. In the case of traditional two-stage growth techniques, limited success has been achieved to increase the band gap by substituting indium with gallium. In this study, sputtered copper-indium alloys were exposed to a H2Se/Ar atmosphere under defined conditions in order to produce partially reacted CuInSe2 structures. These films were subsequently exposed to a H2S/Ar atmosphere to produce monophasic CuIn(Se, S)2 quaternary alloys. The homogeneous incorporation of S into CuInSe2 led to a systematic shift in the lattice parameters and band gap of the absorber films. From these studies optimum selenization/sulfurization conditions were determined for the deposition of homogeneous CuIn(Se, S)2 thin films with an optimum band gap values between 1.15 and 1.2eV.",

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