TY - CHAP
T1 - Cylindrical Surrounding Double-Gate RF MOSFET
AU - Srivastava, Viranjay M.
AU - Singh, Ghanshyam
N1 - Publisher Copyright:
© 2014, Springer International Publishing Switzerland.
PY - 2014
Y1 - 2014
N2 - To reduce the size and increase the compactness in terms of area for the designed double-gate (DG) MOSFET as discussed in Chap. 3, we have analyzed and model the gate all around the DG MOSFET and in this chapter we have designed the cylindrical surrounding double-gate (CSDG) MOSFET and analyzed the design parameters of this MOSFET as a RF switch for the advanced wireless telecommunication systems. We have emphasized on the basics of the circuit parameters such as drain current, threshold voltage, resonant frequency, resistances at switch ON-state condition, capacitances, energy stored, cross talk, and switching speed required for the integrated circuit of the radio frequency subsystem of the CSDG MOSFET device and physical significance of these basic circuit parameters are also discussed. We have analyzed the CSDG MOSFET stored more energy (1.4 times) as compared to the cylindrical surrounding single-gate (CSSG) MOSFET. The ON-state resistance of CSDG MOSFET is half as compared to the DG MOSFET and SG MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than that of the DG MOSFET and SG MOSFET.
AB - To reduce the size and increase the compactness in terms of area for the designed double-gate (DG) MOSFET as discussed in Chap. 3, we have analyzed and model the gate all around the DG MOSFET and in this chapter we have designed the cylindrical surrounding double-gate (CSDG) MOSFET and analyzed the design parameters of this MOSFET as a RF switch for the advanced wireless telecommunication systems. We have emphasized on the basics of the circuit parameters such as drain current, threshold voltage, resonant frequency, resistances at switch ON-state condition, capacitances, energy stored, cross talk, and switching speed required for the integrated circuit of the radio frequency subsystem of the CSDG MOSFET device and physical significance of these basic circuit parameters are also discussed. We have analyzed the CSDG MOSFET stored more energy (1.4 times) as compared to the cylindrical surrounding single-gate (CSSG) MOSFET. The ON-state resistance of CSDG MOSFET is half as compared to the DG MOSFET and SG MOSFET, which reveals that the current flow from source to drain in CSDG MOSFET is better than that of the DG MOSFET and SG MOSFET.
KW - Drain Current
KW - Flicker Noise
KW - Short Channel Effect
KW - Subthreshold Swing
KW - Threshold Voltage
UR - http://www.scopus.com/inward/record.url?scp=85056433020&partnerID=8YFLogxK
U2 - 10.1007/978-3-319-01165-3_5
DO - 10.1007/978-3-319-01165-3_5
M3 - Chapter
AN - SCOPUS:85056433020
T3 - Analog Circuits and Signal Processing
SP - 111
EP - 142
BT - Analog Circuits and Signal Processing
PB - Springer
ER -